MAGX-000040-00500P-V2 Datasheet, PDF (1/10 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband 5 W CW / Pulsed Transistor in Plastic Package

MAGX-000040-00500P
GaN Wideband 5 W CW / Pulsed Transistor in Plastic Package
DC - 4.0 GHz
Features
 GaN on SiC D-Mode Transistor Technology
 Common-Source Configuration
 Unmatched, Coupled DC and RF
 Ideal for Pulsed and CW Applications up to 50 V
 50 V Typical Bias, Class AB
 Excellent Thermal Resistance
 Thermally-Enhanced Plastic SOT-89 Package
 MTTF = 600 years (T_J < 200°C)
 Halogen-Free “Green” Mold Compound
 RoHS* Compliant and 260°C Reflow Compatible
 MSL1
Description
The MAGX-000040-00500P is a GaN on SiC
unmatched power device offering the widest RF
frequency capability, most reliable high voltage
operation, lowest overall transistor size, cost and
weight in a “TRUE SMT”^TM plastic package.
Use of an internal stress buffer technology allows
reliable operation at junction temperatures up to
200°C. The small package size and excellent RF
performance make it an ideal replacement for costly
flanged or metal-backed module components.
Functional Schematic
Ordering Information¹
Part Number
Package
MAGX-000040-00500P
Bulk Packaging
MAGX-000040-0050TP
500 Piece Reel
MAGX-000040-SB2PPR
Sample Board
1. Reference Application Note M513 for reel size information.
Pin Configuration
Pin No.
1
2
3
4
Function
V_GG/RF_IN
GND
V_DD/RF_OUT
GND
Rev. V2
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
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