MAGX-000035-045000 Datasheet, PDF (1/8 Pages) M/A-COM Technology Solutions, Inc. – Broadband Class AB Operation

MAGX-000035-045000
GaN on SiC HEMT Pulsed Power Transistor
45 W Peak, DC-3500 MHz, 1 ms Pulse, 10% Duty
Features
 GaN on SiC Depletion Mode Transistor
 Common-Source Configuration
 Broadband Class AB Operation
 Thermally Enhanced Cu/Mo/Cu Package
 RoHS* Compliant
 +50V Typical Operation
 MTTF = 600 years (T_J < 200°C)
Application
 Civilian and Military Pulsed Radar
Rev. V2
MAGX-000035-045000
Description
The MAGX-000035-045000 is a gold metalized
unmatched Gallium Nitride (GaN) on Silicon Carbide
(SiC) RF power transistor optimized for civilian and
military radar pulsed applications between DC -
3500 MHz. Using state of the art wafer fabrication
processes, these high performance transistors
provide high gain, efficiency, bandwidth and
ruggedness over a wide bandwidth for today’s
demanding application needs. The MAGX-000035-
045000 is constructed using a thermally enhanced
Cu/Mo/Cu flanged ceramic package which provides
excellent thermal performance. High breakdown
voltages allow for reliable and stable operation in
extreme mismatched load conditions unparalleled
with older semiconductor technologies.
Ordering Information
Part Number
MAGX-000035-045000
Description
Bulk Packaging
MAGX-S10035-045000 Sample Board (2.7 - 3.5 GHz)
1 _{* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.}
1
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