MAGX-000035-015000-V1 Datasheet, PDF (1/7 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC HEMT Pulsed Power Transistor

MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Features
 GaN on SiC Depletion Mode Transistor
 Common-Source Configuration
 Broadband Class AB Operation
 Thermally Enhanced Package (Flanged: Cu/W,
Flangeless: Cu)
 RoHS* Compliant
 +50V Typical Operation
 MTTF = 600 years (T_J < 200°C)
Primary Applications
 Commercial Wireless Infrastructure
(WCDMA, LTE, WiMAX)
 Air Traffic Control Radar - Commercial
 Weather Radar - Commercial
 Military Radar - Military
 Public Radio
 Industrial, Scientific and Medical
 SATCOM
 Instrumentation
Description
The MAGX-000035-01500X is a gold-metalized
unmatched Gallium Nitride (GaN) on Silicon Carbide
RF power transistor suitable for a variety of RF power
amplifier applications. Using state of the art wafer
fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over multiple octave bandwidths for
today’s demanding application needs.
The MAGX-000035-01500X is constructed using a
thermally enhanced flanged (Cu/W) or flangeless
(Cu) ceramic package which provides excellent
thermal performance. High breakdown voltages allow
for reliable and stable operation in extreme
mismatched load conditions unparalleled with older
semiconductor technologies.
Rev. V1
MAGX-000035-015000 (Flanged)
MAGX-000035-01500S (Flangeless)
Ordering Information
Part Number
Description
MAGX-000035-015000 Flanged, Bulk Packaging
MAGX-000035-01500S Flangeless, Bulk Packaging
MAGX-L20035-015000
MAGX-L20035-01500S
Sample Board
(1.2 - 1.4 GHz, Flanged)
Sample Board
(1.2 - 1.4 GHz, Flangeless)
1 ^{* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.}
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