MAGX-000025-150000_15 Datasheet, PDF (1/7 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC HEMT Power Transistor

MAGX-000025-150000
GaN on SiC HEMT Power Transistor
150 W, 1-2500 MHz
Features
 GaN on SiC Transistor Technology
 Broadband Unmatched Transistor
 Common-Source Configuration
 +50 V Typical Operation
 Class AB Operation
 RoHS* Compliant and 260°C Reflow Compatible
 MTTF = 600 years (T_J < 200 °C)
Applications
 General purpose for pulsed or CW applications
Description
The MAGX-000025-150000 is a gold-metalized
Gallium Nitride (GaN) on Silicon Carbide (SiC) RF
power transistor suitable for a variety of RF power
amplifier applications. Using state of the art wafer
fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over a wide bandwidth for today’s
demanding application needs. High breakdown
voltages allow for reliable and stable operation under
more extreme mismatch load conditions compared
with older semiconductor technologies.
Functional Schematic
MAGX-000025-150000
Rev. V1
Ordering Information
Part Number
MAGX-000025-150000
MAGX-000025-SB2PPR
MAGX-000025-SB1PPR
Description
Flanged
1200-1400 MHz
Evaluation Board
2500 MHz
Evaluation Board
Pin No. Function
1 Vgg/RF Input
2 Vdd/RF Output
3 Vgg/RF Input
4 Vdd/RF Output
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
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