MADS-002545-1307_15 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – Ultra Low Parasitic Capacitance and Inductance

MADS-002545-1307 Series
SURMOUNT^TM Schottky Diodes:
Cross-Over Quad Series, Ultra-Small 600 µm Surface-Mount Chip
Rev. V1
Features
 Ultra Low Parasitic Capacitance and Inductance
 Surface Mountable in Microwave Circuits , No
Wire bonds Required
 Rugged HMIC Construction with Polyimide
Scratch Protection
 Reliable, Multilayer Metallization with a Diffusion
 Barrier, 100% Stabilization Bake (300°C, 16 hours)
 Lower Susceptibility to ESD Damage
A
A
B
B
Description and Applications
The MADS-002545-1307 Series Surmount
silicon Schottky cross-over quad diodes are fabricated
with the patented Heterolithic Microwave Integrated
Circuit (HMIC) process. HMIC circuits consist of silicon
pedestals which form diodes or via conductors embed-
ded in a glass dielectric, which acts as the low disper-
sion, low loss, microstrip transmission medium. The
combination of silicon and glass allows HMIC devices
to have excellent loss and power dissipation character-
istics in a low profile, reliable device.
These Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of a
beam lead device coupled with the superior mechanical
performance of a chip. The Surmount structure em-
ploys very low resistance silicon vias to connect the
Schottky contacts to the metalized mounting pads on
the bottom surface of the chip. These devices are reli-
able, repeatable, and a lower cost performance solu-
tion to conventional devices. They have lower suscepti-
bility to electrostatic discharge than conventional beam
lead Schottky diodes.
The multi-layer metallization employed in the fabrica-
tion of the Surmount Schottky junctions includes a plati-
num diffusion barrier, which permits all devices to be
subjected to a 16-hour non-operating stabilization bake
at 300°C.
The “0202” outline allows for surface mount placement
and multi- functional polarity orientations. The MADS-
002545-1307 Series is recommended for use in micro-
wave circuits through Ku band frequencies for lower
power applications such as mixers, sub-harmonic mix-
ers, detectors and limiters. The HMIC construction fa-
cilitates the direct replacement of more fragile beam
lead diodes with the corresponding Surmount diode,
which can be connected to a hard or soft substrate cir-
cuit with solder.
Top View
C
D
E
DC
D
E
D
Side View
Dim.
A
B
C
D Sq.
E Sq.
Inches
Min.
0.023
Max.
0.025
0.023
0.025
0.004
0.008
0.007
0.009
0.007
0.009
Millimeters
Min.
0.575
Max.
0.625
0.575
0.625
0.102
0.203
0.175
0.225
0.175
0.225
Ordering Information
Part Number
Package
MADS-002545-1307LG Low Barrier Die in Carrier
MADS-002545-1307MG Medium Barrier Die in Carrier
MADS-002545-1307HG High Barrier Die in Carrier
1
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