MADP-042XX8-13060_15 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Rugged Silicon-Glass Construction

MADP-042XX8-13060 Series
SURMOUNT^TM 8µM PIN Diodes
RoHS Compliant
Rev. V2
Features
 Surface Mount
 No Wirebonds Required
 Rugged Silicon-Glass Construction
 Silicon Nitride Passivation
 Polymer Scratch Protection
 Low Parasitic Capacitance and Inductance
 High Average and Peak Power Handling
 RoHS Compliant
Description
This device is a silicon, glass PIN diode surmount chip
fabricated with M/A-COM Technology Solutions’ patented
HMIC^TM process. This device features two silicon
pedestals embedded in a low loss, low dispersion glass.
The diode is formed on the top of one pedestal and
connections to the backside of the device are facilitated by
making the pedestal sidewalls electrically conductive.
Selective backside metallization is applied producing a
surface mount device. This vertical topology provides for
exceptional heat transfer. The topside is fully
encapsulated with silicon nitride and has an additional
polymer layer for scratch and impact protection. These
protective coatings prevent damage to the junction and the
anode air-bridge during handling and assembly.
Applications
These packageless devices are suitable for moderate
incident power applications, ≤ 10W/C.W. or where the
peak power is ≤ 52W, pulse width is ≤ 1μS, and duty cycle
is ≤ 0.01%. Their low parasitic inductance, 0.4 nH, and
excellent RC constant, make these devices a superior
choice for higher frequency switch elements when
compared to their plastic package counterparts.
Absolute Maximum Ratings¹@ T_AMB = +25°C
(unless otherwise specified)
D
E
G
F
DIM
A
B
C
D
E
F
G
INCHES
MIN.
MAX.
0.040
0.042
0.021
0.023
0.004
0.008
0.013
0.015
0.011
0.013
0.013
0.015
0.019
0.021
MM
MIN.
MAX.
1.025
1.075
0.525
0.575
0.102
0.203
0.325
0.375
0.275
0.325
0.325
0.375
0.475
0.525
Parameter
MADP-042…-13060
C.W. Incident Power dBm
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Junction Temperature
Mounting Temperature
Absolute Maximum
308 408 508 908
+42
+44
+43
+39
250 mA
-100 V
-55°C to +125°C
-55°C to +150°C
+175°C
+280°C for 10 seconds
Notes:
1. Backside metal: 0.1 μM thick.
2. Yellow hatched areas indicate backside ohmic gold contacts.
3. All devices have the same outline dimensions ( A to G).
1. Exceeding these limits may cause permanent damage.
1
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