MA4SPS42X_V7 Datasheet, PDF (1/7 Pages) M/A-COM Technology Solutions, Inc. – SURMOUNTTM PIN Diodes

MA4SPS42X Series
SURMOUNT^TM PIN Diodes
MA4SPS421, MA4SPS422
Features
 Surface Mount
 No Wire Bonding Required
 Rugged Silicon-Glass Construction
 Silicon Nitride Passivation
 Polymer Scratch Protection
 Low Parasitic Capacitance and Inductance
 Higher Average and Peak Power Handling
 RoHS Compliant* and 260º Reflow Compatible
MA4SPS421
Rev. V7
MA4SPS422
Description
This device is a Silicon-Glass PIN diode chip
fabricated with M/A-COM Technology Solutions
patented HMIC^TM process. This device features two
silicon pedestals embedded in a low loss, low dis-
persion glass. The diode is formed on the top of one
pedestal and connections to the backside of the
device are facilitated by making the pedestal side-
walls electrically conductive. Selective backside
metallization is applied producing a surface mount
device. This vertical topology provides for
exceptional heat transfer. The topside is fully
encapsulated with silicon nitride and has an
additional polymer layer for scratch and impact
protection. These protective coatings prevent
damage to the junction and the anode air-bridge
during handling and assembly.
Applications
1. Backside metal: 0.1 µM thick.
2. Yellow hatched areas indicate backside ohmic gold
contacts.
3. All devices have the same outline dimensions (A to G).
INCHES
MM
DIM
MIN.
MAX.
MIN.
MAX.
A
0.040
0.042
1.025
1.075
B
0.021
0.023
0.525
0.575
C
0.004
0.008
0.102
0.203
D
0.013
0.015
0.325
0.375
E
0.011
0.013
0.275
0.325
F
0.013
0.015
0.325
0.375
G
0.019
0.021
0.475
0.525
These surmount devices are suitable for usage in
moderate incident power (10W C.W.) or higher
incident peak power (500W) series, shunt, or
series-shunt switches. Lower parasitic inductance,
0.1 to 0.2nH, and excellent RC constant (0.45pS),
make the devices ideal for higher frequency switch
elements compared to their plastic device
counterparts.
Absolute Maximum Ratings @ T_A = 25°C
(unless otherwise specified)
Parameter
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Junction Temperature
Dissipated Power
( RF & DC )
Mounting Temperature
Absolute Maximum
250mA
-200V
-55°C to +125°C
-55°C to +150°C
+175°C
1.8W
+280°C for 30 seconds
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: [phone] • Europe Tel: [phone]
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
• India Tel: [phone]
• China Tel: [phone]
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.