MA4SPS42X Datasheet, PDF (1/7 Pages) M/A-COM Technology Solutions, Inc. – SURMOUNTTM PIN Diodes

MA4SPS42X Series
SURMOUNT^TM PIN Diodes
MA4SPS421, MA4SPS422
RoHS Compliant
Features
♦ Surface Mount
♦ No Wire Bonding Required
♦ Rugged Silicon-Glass Construction
♦ Silicon Nitride Passivation
♦ Polymer Scratch Protection
♦ Low Parasitic Capacitance and Inductance
♦ Higher Average and Peak Power Handling
♦ RoHS Compliant
MA4SPS421
M/A-COM Products
Rev. V6
MA4SPS422
Description
This device is a Silicon-Glass PIN diode chip
fabricated with M/A-COM’s patented HMIC^TM
process. This device features two silicon pedestals
embedded in a low loss, low dispersion glass. The
diode is formed on the top of one pedestal and
connections to the backside of the device are
facilitated by making the pedestal sidewalls
electrically conductive. Selective backside
metallization is applied producing a surface mount
device. This vertical topology provides for
exceptional heat transfer. The topside is fully
encapsulated with silicon nitride and has an
additional polymer layer for scratch and impact
protection. These protective coatings prevent
damage to the junction and the anode air-bridge
during handling and assembly.
Applications
1. Backside metal: 0.1 µM thick.
2. Yellow hatched areas indicate backside ohmic gold
contacts.
3. All devices have the same outline dimensions (A to G).
INCHES
MM
DIM
MIN.
MAX.
MIN.
MAX.
A
0.040
0.042
1.025
1.075
B
0.021
0.023
0.525
0.575
C
0.004
0.008
0.102
0.203
D
0.013
0.015
0.325
0.375
E
0.011
0.013
0.275
0.325
F
0.013
0.015
0.325
0.375
G
0.019
0.021
0.475
0.525
These surmount devices are suitable for usage in
moderate incident power (10W C.W.) or higher
incident peak power (500W) series, shunt, or
series-shunt switches. Lower parasitic inductance,
0.1 to 0.2nH, and excellent RC constant (0.45pS),
make the devices ideal for higher frequency switch
Absolute Maximum Ratings @ T_A = 25°C
(unless otherwise specified)
Parameter
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Junction Temperature
Dissipated Power
( RF & DC )
Mounting Temperature
Absolute Maximum
250mA
-200V
-55°C to +125°C
-55°C to +150°C
+175°C
1.8W
+280°C for 30 seconds
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
• North America Tel: [phone] / Fax: [phone]
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
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• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macom.com for additional data sheets and product information.
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.