MA4E931Z2-1261A_15 Datasheet, PDF (1/2 Pages) M/A-COM Technology Solutions, Inc. – Schottky Zero Bias Detector Diode

MA4E931Z2-1261A
Schottky Zero Bias Detector Diode
Features
 Can be used without external DC bias
 Exhibits uniform Rv characteristics
 High Voltage Sensitivity
 P Type Schottky Diode
 Available in chip form (ODS-1261)
 RoHS Compliant* and 260°C Reflow Compatible
Description and Applications
The MA4E931Z2-1261A Zero Bias Detector (ZBD)
diode is suitable for use in microstrip or stripline
detector circuits. These chips can be used in
automatic assembly processes due to their 0.004”
gold bond pads and sturdy construction. Designed
for high volume, low cost, detector applications.
Maximum Ratings
Parameter
Symbol Unit
Operating Temperature TOP
°C
Storage Temperature TSTG
°C
Incident RF Power (CW) PT
mW
Reverse Voltage @ 25 °C VR
V
Values
-65 to +150
-65 to +150
75
3
Chip Outline
MA4E931Z2-1261A
Typ.
0.014”
0.36
Typ.
0.004”
0.10
Rev. V2
Typ.
0.014”
0.36
Inches
mm
Electrical Specifications @ +25 °C
Parameter
Condition Symbo Specificatio
Breakdown Voltage I_R = 1.0 mA V_B
Forward Voltage
I_F = 1.0 mA V_F
3.0 V min.
150 mV typ.
RF Performance @ 10.0 GHz @ +25 °C
Parameter
Conditions
Typical
Tangential Signal
Sensitivity
Video Impedance (Rv)
Voltage Output (Eo)
BW = 2 MHz
-52 dBm
Video NF = 3.5 dB
min
BW = 2 MHz
2.5KΩ min
4.5KΩ max
BW = 2 MHz 5.0 mV min
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
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