MA4AGSW2_V5 Datasheet, PDF (1/7 Pages) M/A-COM Technology Solutions, Inc. – SPDT AlGaAs PIN Diode Switch

MA4AGSW2
SPDT AlGaAs PIN Diode Switch
Rev. V5
FEATURES
 Ultra Broad Bandwidth : 50 MHz to 50 GHz
 Functional Bandwidth : 50 MHz to 70 GHz
 0.7 dB Insertion Loss
 33 dB Isolation at 50 GHz
 Low Current consumption
 -10mA for low loss state
+10mA for Isolation state
 M/A-COM Tech’s unique AlGaAs
hetero-junction anode technology
 Silicon Nitride Passivation
 Polymer Scratch protection
 RoHS Compliant* and 260°C Reflow Compatible
DESCRIPTION
The MA4AGSW2 is an Aluminum-Gallium-Arsenide,
single pole, double throw (SPDT), PIN diode switch.
The switch features enhanced AlGaAs anodes which
are formed using M/A-COM Tech’s patented hetero-
junction technology. This technology produces a
switch with less loss than conventional GaAs proc-
esses. As much as a 0.3 dB reduction in insertion
loss can be realized at 50GHz. These devices are
fabricated on an OMCVD epitaxial wafer using a
process designed for high device uniformity and
extremely low parasitics. The diodes themselves
exhibit low series resistance, low capacitance, and
fast switching speed. They are fully passivated with
silicon nitride and have an additional polymer layer
for scratch protection. The protective coating
prevents damage to the diode junction and anode
air-bridges during handling and assembly. Off chip
bias circuitry is required.
APPLICATIONS
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes makes this switch
ideal for fast switching, high frequency, multi-throw
switch designs. These AlGaAs PIN switches are use
in switching arrays for radar systems, radiometers,
test equipment and other multi-assembly compo-
nents.
Yellow areas indicate bond pads
Absolute Maximum Ratings @ T_AMB = +25°C
Parameter
Maximum Rating
Operating Temperature -55°C to +125°C
Storage Temperature
-55°C to +150°C
Incident C.W. RF Power
+23dBm C.W.
Breakdown Voltage
25V
Bias Current
± 25mA
Assembly Temperature +300°C < 10 sec
Junction Temperature
+175°C
Maximum combined operating conditions for RF Power, D.C.
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @
+85°C.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: [phone] • Europe Tel: [phone]
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
• India Tel: [phone]
• China Tel: [phone]
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.