LF2805A_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor

LF2805A
RF Power MOSFET Transistor
5 W, 500 - 1000 MHz, 28 V
Features
 N-Channel enhancement mode device
 DMOS structure
 Lower capacitances for broadband operation
 Common source configuration
 Lower noise floor
 Applications
Broadband linear operation
500 MHz to 1400 MHz
 RoHS Compliant
Absolute Maximum Ratings @ 25°C
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
V_DS
V_GS
I_DS
P_D
T_J
T_STG
θ_JC
65
20
1.4
14.4
200
-65 to +150
12.1
Units
V
V
A
W
°C
°C
°C/W
Typical Device Impedance
F (MHz)
Z_IN (Ω)
Z_LOAD (Ω)
500
4.3 - j29.0
27.3 +j28.6
1000
2.2 - j2.75
8.0 + j16.0
1400
2.8 - j3.0
9.4 + j10.6
V_DD = 28V, I_DQ = 50mA, P_OUT = 5.0 W
Z_IN is the series equivalent input impedance of the device from
gate to source.
Z_LOAD is the optimum series equivalent load impedance as
measured from drain to ground.
Package Outline
Rev. V1
LETTER
DIM.
A
B
C
D
E
F
G
H
J
K
L
M
MILLIMETERS
MIN
MAX
20.70
20.96
14.35
14.61
13.72
14.22
6.27
6.53
6.22
6.48
6.22
6.48
1.14
1.40
2.92
3.18
1.40
1.65
1.96
2.46
3.61
4.37
.08
.15
INCHES
MIN
MAX
.815
.825
.565
.575
.540
.560
.247
.257
.245
.255
.245
.255
.045
.055
.115
.125
.055
.065
.077
.097
.142
.172
.003
.006
Electrical Characteristics @ 25°C
Parameter
Symbol Min Max Units
Test Conditions
Drain-Source Breakdown Voltage
BV_DSS
65
-
V
V_GS = 0.0 V , I_DS = 2.0 mA
Drain-Source Leakage Current
I_DSS
-
1.0
mA
V_GS = 28.0 V , V_GS = 0.0 V
Gate-Source Leakage Current
I_GSS
-
1.0
µA
V_GS = 20.0 V , V_DS = 0.0 V
Gate Threshold Voltage
V_GS(TH)
2.0
6.0
V
V_DS = 10.0 V , I_DS = 10.0 mA
Forward Transconductance
G_M
80
-
mS V_DS = 10.0 V , I_DS = 100.0 mA , Δ V_GS = 1.0V, 80 μs Pulse
Input Capacitance
C_ISS
-
7
pF
V_DS = 28.0 V , F = 1.0 MHz
Output Capacitance
C_OSS
-
5
pF
V_DS = 28.0 V , F = 1.0 MHz
Reverse Capacitance
C_RSS
-
2.4
pF
V_DS = 28.0 V , F = 1.0 MHz
Power Gain
G_P
10
-
dB
V_DD = 28.0 V, I_DQ = 50 mA, P_OUT = 5.0 W F =1.0 GHz
Drain Efficiency
ŋ_D
50
-
%
V_DD = 28.0 V, I_DQ = 50 mA, P_OUT = 5.0 W F =1.0 GHz
1
Load Mismatch Tolerance
VSWR-T - 20:1
-
V_DD = 28.0 V, I_DQ = 50 mA, P_OUT = 5.0 W F =1.0 GHz
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