LF2802A Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFETPower Transistor,2W,28V 500-1000MHz

LF2802A
RF Power MOSFET Transistor
2W, 500-1000MHz, 28V
Features
• N-Channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• Common source configuration
• Lower noise floor
• Applications
Broadband linear operation
500 MHz to 1400 MHz
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
V_DS
65
Gate-Source Voltage
V_GS
20
Drain-Source Current
I_DS
0.7
Power Dissipation
P_D
8
Junction Temperature
T_J
200
Storage Temperature
T_STG
-55 to +150
Thermal Resistance
θ_JC
21.8
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
Z_IN (Ω)
Z_LOAD (Ω)
500
10.0 - j41.5
40.0 +j53.0
1000
4.2 - j12.0
11.85 + j33.0
1400
3.5 - j1.0
7.5 + j23.3
V_DD = 28V, I_DQ = 25mA, P_OUT = 2.0 W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance as
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
BV_DSS
65
-
Drain-Source Leakage Current
I_DSS
-
0.5
Gate-Source Leakage Current
I_GSS
-
0.5
Gate Threshold Voltage
V_GS(TH)
2.0
6.0
Forward Transconductance
G_M
40
-
Input Capacitance
C_ISS
-
3.5
Output Capacitance
C_OSS
- 3.75
Reverse Capacitance
C_RSS
-
1.2
Power Gain
G_P
10
-
Drain Efficiency
ŋ_D
40
-
Load Mismatch Tolerance
VSWR-T - 20:1
Package Outline
M/A-COM Products
Released; RoHS Compliant
LETTER
DIM
A
B
C
D
E
F
G
H
J
K
L
M
MILLIMETERS
MIN
MAX
20.70
20.96
14.35
14.61
13.72
14.22
6.27
6.53
6.22
6.48
6.22
6.48
1.14
1.40
2.92
3.18
1.40
1.65
1.96
2.46
3.61
4.37
.08
.15
INCHES
MIN MAX
.815 .825
.565 .575
.540 .560
.247 .257
.245 .255
.245 .255
.045 .055
.115 .125
.055 .065
.077 .097
.142 .172
.003 .006
Units
V
mA
µA
V
mS
pF
pF
pF
dB
%
-
Test Conditions
V_GS = 0.0 V , I_DS = 1.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 5.0 mA
V_DS = 28.0 V , I_DS = 50.0 mA , Δ V_GS = 1.0V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DD = 28.0 V, I_DQ = 25 mA, P_OUT = 2.0 W F =1.0 GHz
V_DD = 28.0 V, I_DQ = 25 mA, P_OUT = 2.0 W F =1.0 GHz
V_DD = 28.0 V, I_DQ = 25 mA, P_OUT = 2.0 W F =1.0 GHz
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: [phone] / Fax: [phone]
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
• Europe Tel: [phone] / Fax: [phone]
• Asia/Pacific Tel: [phone] / Fax: [phone]
Visit www.macomtech.com for additional data sheets and product information.
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. _{M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make}
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.