K3313 Datasheet, PDF (1/2 Pages) M/A-COM Technology Solutions, Inc. – Silicon Hyperabrupt Junction Varactor Diode

K3313
Silicon Hyperabrupt Junction Varactor Diode
Features
 Compact 1.27 x 1.7 x 0.09 mm SMT Package
 Uniform Capacitance / Temperature Coefficient
 Available on Tape and Reel
Description
The K3313 silicon hyperabrupt junction varactor
diode is designed for use in voltage controlled
oscillators (VCO’s) with low tuning voltage operation.
Rev. V1
Electrical Specifications: T_A = +25°C (unless otherwise specified)
Parameter
Test Conditions
Units Min.
Voltage Breakdown
I_R = -10 µA, DC
V
12.0
Forward Voltage
Total Capacitance
I_F = 100 mA, DC
V_R = -1.0 V, 1 MHz
V_R = -2.5 V, 1 MHz
V_R = -4.0 V, 1 MHz
V
—
20.0
pF
8.5
4.0
Typ.
—
—
—
Absolute Maximum Ratings^1,2
Parameter
Absolute Maximum
Breakdown Voltage
12 Min. @ -10 µA
Moisture Sensitivity Level
1
Operating Temperature
-55°C to +125°C
Storage Temperature
-65°C to +200°C
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. MACOM does not recommend sustained operation near these
survivability limits.
Outline Drawing, SOD-323
Max.
—
1.0
22.0
8.5
4.6
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to electrostatic
discharge (ESD) and can be damaged by static electricity.
Proper ESD control techniques should be used when handling
these Class 0 (HBM) devices.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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