DU2880V_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor

DU2880V
RF Power MOSFET Transistor
80 W, 2 - 175 MHz, 28 V
Features
 N-Channel enhancement mode device
 DMOS structure
 Lower capacitances for broadband operation
 High saturated output power
 Lower noise figure than competitive devices
 RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
V_DS
65
Gate-Source Voltage
V_GS
20
Drain-Source Current
I_DS
8*
Power Dissipation
P_D
206
Junction Temperature
Storage Temperature
T_J
T_STG
200
-55 to +150
Thermal Resistance
θ_JC
0.85
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
Z_IN (Ω)
Z_LOAD (Ω)
30
4.5 - j14.5
13.5 +j4.5
100
3.0 - j10.5
13.5 + j6.0
175
2.0 - j7.5
12.0 + j4.5
V_DD = 28V, I_DQ = 400mA, P_OUT = 80 W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance
as measured from drain to ground.
Package Outline
Rev. V1
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min
Drain-Source Breakdown Voltage
BV_DSS
65
Drain-Source Leakage Current
I_DSS
-
Gate-Source Leakage Current
I_GSS
-
Gate Threshold Voltage
V_GS(TH)
2.0
Forward Transconductance
G_M
1.0
Input Capacitance
C_ISS
-
Output Capacitance
Reverse Capacitance
C_OSS
-
C_RSS
-
Power Gain
G_P
13
Drain Efficiency
ŋ_D
60
Load Mismatch Tolerance
VSWR-T -
Max
-
2.0
2.0
6.0
-
90
80
16
-
-
30:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V_GS = 0.0 V , I_DS = 10.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 200.0 mA
V_DS = 10.0 V , I_DS = 2000.00 mA , Δ V_GS = 1.0V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DD = 28.0 V, I_DQ = 400 mA, P_OUT = 80.0 W F =175 MHz
V_DD = 28.0 V, I_DQ = 400 mA, P_OUT = 80.0 W F =175 MHz
V_DD = 28.0 V, I_DQ = 400 mA, P_OUT = 80.0 W F =175 MHz
1 ^{*Per side}
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