DU2860T_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor

DU2860T
RF Power MOSFET Transistor
60 W, 2 - 175 MHz, 28 V
Features
 N-Channel enhancement mode device
 DMOS structure
 Lower capacitances for broadband operation
 High saturated output power
 Lower noise figure than bipolar devices
 RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
V_DS
65
Gate-Source Voltage
V_GS
20
Drain-Source Current
I_DS
12
Power Dissipation
P_D
159
Junction Temperature
T_J
200
Storage Temperature
T_STG
-65 to +150
Thermal Resistance
θ_JC
1.1
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
30
Z_IN (Ω)
9.0 - j4.0
Z_LOAD (Ω)
6.0 +j0.0
50
10.0 - j6.5
5.0 + j2.0
100
6.0 - j5.5
4.0 + j3.0
200
1.1 - j3.0
2.0 + j1.9
V_DD = 28V, I_DQ = 300mA, P_OUT = 60 W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance
as measured from drain to ground.
Package Outline
Rev. V1
LETTER
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
MIN
MAX
24.64
24.89
18.29
18.54
21.21
21.97
12.60
12.85
6.22
6.48
3.81
4.06
5.33
5.59
5.08
5.33
3.05
3.30
2.29
2.54
4.06
4.57
6.68
7.49
.10
.15
INCHES
MIN
MAX
.970
.980
.720
.730
.835
.865
.496
.506
.245
.255
.150
.160
.210
.220
.200
.210
.120
.130
.090
.100
.160
.180
.263
.295
.004
.006
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
BV_DSS
65
-
Drain-Source Leakage Current
I_DSS
-
3.0
Gate-Source Leakage Current
I_GSS
-
3.0
Gate Threshold Voltage
V_GS(TH)
2.0
6.0
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
G_M
C_ISS
C_OSS
C_RSS
1.5
-
-
135
-
120
-
24
Power Gain
G_P
13
-
Drain Efficiency
ŋ_D
60
-
Load Mismatch Tolerance
1
VSWR-T - 30:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V_GS = 0.0 V , I_DS = 15.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 300.0 mA
V_DS = 10.0 V , I_DS = 3.0 A , Δ V_GS = 1.0V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DD = 28.0 V, I_DQ = 300 mA, P_OUT = 60 W F =175 MHz
V_DD = 28.0 V, I_DQ = 300 mA, P_OUT = 60 W F =175 MHz
V_DD = 28.0 V, I_DQ = 300 mA, P_OUT = 60 W F =175 MHz
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