DU2840S Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 4OW, 28V 2 - 175 MHz

DU2840S
RF Power MOSFET Transistor
40W, 2-175MHz, 28V
Features
• N-Channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• High saturated output power
• Lower noise figure than bipolar devices
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
V_DS
65
Gate-Source Voltage
V_GS
20
Drain-Source Current
I_DS
8
Power Dissipation
P_D
125
Junction Temperature
T_J
200
Storage Temperature
T_STG
-55 to +150
Thermal Resistance
θ_JC
1.4
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
Z_IN (Ω)
Z_LOAD (Ω)
30
12.0 - j6.8
6.5 - j1.5
50
10.0 - j6.5
6.0 - j1.8
100
6.0 - j5.5
5.5 - j1.8
200
1.1 - j3.0
3.5 - j1.8
V_DD = 28V, I_DQ = 200mA, P_OUT = 40 W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance as
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
BV_DSS
65
-
Drain-Source Leakage Current
I_DSS
-
2.0
Gate-Source Leakage Current
I_GSS
-
2.0
Gate Threshold Voltage
V_GS(TH)
2.0
6.0
Forward Transconductance
G_M
1
-
Input Capacitance
C_ISS
-
90
Output Capacitance
Reverse Capacitance
C_OSS
C_RSS
-
80
-
16
Power Gain
G_P
13
-
Drain Efficiency
ŋ_D
60
-
Load Mismatch Tolerance
VSWR-T - 30:1
Package Outline
M/A-COM Products
Released; RoHS Compliant
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
LETTER
DIM
A
B
C
D
E
F
G
H
J
K
L
MILLIMETERS
MIN
MAX
24.64
24.89
18.29
18.54
20.07
20.83
9.47
9.73
6.22
6.48
5.64
5.79
2.92
3.30
2.29
2.67
4.04
4.55
6.58
7.39
.10
.15
INCHES
MIN MAX
.970 .980
.720 .730
.790 .820
.373 .383
.245 .255
.222 .228
.115 .130
.090 .105
.159 .179
.259 .291
.004 .006
Test Conditions
V_GS = 0.0 V , I_DS = 10.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 200.0 mA
V_DS = 10.0 V , I_DS = 2000.0 mA , Δ V_GS = 1.0V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DD = 28.0 V, I_DQ = 200 mA, P_OUT = 40 W F =175 MHz
V_DD = 28.0 V, I_DQ = 200 mA, P_OUT = 40 W F =175 MHz
V_DD = 28.0 V, I_DQ = 200 mA, P_OUT = 40 W F =175 MHz
1
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