DU28200M_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor

DU28200M
RF Power MOSFET Transistor
200 W, 2 - 175 MHz, 28 V
Features
 N-Channel enhancement mode device
 DMOS structure
 Lower capacitances for broadband operation
 High saturated output power
 Lower noise figure than bipolar devices
 RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
V_DS
65
Gate-Source Voltage
V_GS
20
Drain-Source Current
I_DS
20
Power Dissipation
P_D
389
Junction Temperature
T_J
200
Storage Temperature
Thermal Resistance
T_STG
θ_JC
-65 to +150
0.45
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
Z_IN (Ω)
Z_LOAD (Ω)
30
2.7 - j4.8
7.2 - j1.9
100
1.6 - j3.0
5.25 - j1.4
150
1.5 - j2.0
5.0 - j0.7
175
1.6 - j1.0
5.2 - j0.6
200
1.8 - j0.5
5.5 - j0.5
V_DD = 28V, I_DQ = 1000mA, P_OUT = 200 W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance
as measured from drain to ground.
Package Outline
LETTER
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MILLIMETERS
MIN
MAX
30.35
30.61
23.65
23.90
13.72
14.22
9.63
9.88
9.40
9.65
9.40
9.65
5.59
5.84
18.80
19.30
9.40
9.65
3.12
3.38
1.47
1.57
2.39
2.74
5.03
5.69
.05
.13
Rev. V1
INCHES
MIN
MAX
1.195
1.205
.931
.941
.540
.560
.379
3.89
.370
.389
.370
.389
.220
.230
.740
.760
.370
.380
.123
.133
.058
.062
.094
.108
.198
.224
.002
.005
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min
Drain-Source Breakdown Voltage
BV_DSS
65
Drain-Source Leakage Current
I_DSS
-
Gate-Source Leakage Current
I_GSS
-
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
V_GS(TH)
2.0
G_M
2.5
C_ISS
-
Output Capacitance
Reverse Capacitance
C_OSS
-
C_RSS
-
Power Gain
G_P
13
Drain Efficiency
Load Mismatch Tolerance
1
ŋ_D
55
VSWR-T -
Max
-
5.0
5.0
6.0
-
225
200
40
-
-
10:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V_GS = 0.0 V , I_DS = 25.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 500.0 mA
V_DS = 10.0 V , I_DS = 5.0A , Δ V_GS = 1.0V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DD = 28.0 V, I_DQ = 1000 mA, P_OUT = 200.0 W F =175 MHz
V_DD = 28.0 V, I_DQ = 1000 mA, P_OUT = 200.0 W F =175 MHz
V_DD = 28.0 V, I_DQ = 1000 mA, P_OUT = 200.0 W F =175 MHz
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