DU28200M Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz

DU28200M
RF Power MOSFET Transistor
200W, 2-175MHz, 28V
Features
• N-Channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• High saturated output power
• Lower noise figure than bipolar devices
Package Outline
M/A-COM Products
Released; RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
V_DS
V_GS
I_DS
P_D
T_J
T_STG
θ_JC
65
20
20
389
200
-65 to +150
0.45
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
30
Z_IN (Ω)
2.7 - j4.8
Z_LOAD (Ω)
7.2 - j1.9
100
1.6 - j3.0
5.25 - j1.4
150
1.5 - j2.0
5.0 - j0.7
175
1.6 - j1.0
5.2 - j0.6
200
1.8 - j0.5
5.5 - j0.5
V_DD = 28V, I_DQ = 1000mA, P_OUT = 200 W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance as
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
BV_DSS
65
-
Drain-Source Leakage Current
I_DSS
-
5.0
Gate-Source Leakage Current
I_GSS
-
5.0
Gate Threshold Voltage
V_GS(TH)
2.0
6.0
Forward Transconductance
G_M
2.5
-
Input Capacitance
C_ISS
-
225
Output Capacitance
Reverse Capacitance
C_OSS
C_RSS
-
200
-
40
Power Gain
G_P
13
-
Drain Efficiency
ŋ_D
55
-
Load Mismatch Tolerance
VSWR-T - 10:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
LETTER
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MILLIMETERS
MIN
MAX
30.35
30.61
23.65
23.90
13.72
14.22
9.63
9.88
9.40
9.65
9.40
9.65
5.59
5.84
18.80
19.30
9.40
9.65
3.12
3.38
1.47
1.57
2.39
2.74
5.03
5.69
.05
.13
INCHES
MIN MAX
1.195 1.205
.931 .941
.540 .560
.379 3.89
.370 .389
.370 .389
.220 .230
.740 .760
.370 .380
.123 .133
.058 .062
.094 .108
.198 .224
.002 .005
Test Conditions
V_GS = 0.0 V , I_DS = 25.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 500.0 mA
V_DS = 10.0 V , I_DS = 5.0A , Δ V_GS = 1.0V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DD = 28.0 V, I_DQ = 1000 mA, P_OUT = 200.0 W F =175 MHz
V_DD = 28.0 V, I_DQ = 1000 mA, P_OUT = 200.0 W F =175 MHz
V_DD = 28.0 V, I_DQ = 1000 mA, P_OUT = 200.0 W F =175 MHz
1
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