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DU28120V_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor
DU28120V
RF Power MOSFET Transistor
120 W, 2 - 175 MHz, 28 V
Features
 N-Channel enhancement mode device
 DMOS structure
 Lower capacitances for broadband operation
 High saturated output power
 Lower noise figure than bipolar devices
 RoHS Compliant
Package Outline
Rev. V1
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
65
Gate-Source Voltage
VGS
20
Drain-Source Current
IDS
12
Power Dissipation
PD
250
Junction Temperature
TJ
200
Storage Temperature
TSTG
-55 to +150
Thermal Resistance
θJC
0.7
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
ZIN (Ω)
ZLOAD (Ω)
30
3.0 - j12.5
8.0 + j6.0
50
1.5 - j8.5
7.0 +j6.5
100
1.0 - j6.0
6.5 + j5.0
VDD = 28V, IDQ = 600mA, POUT = 120 W
ZIN is the series equivalent input impedance of the device
from gate to source.
ZLOAD is the optimum series equivalent load impedance
as measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Return Loss
Load Mismatch Tolerance
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
GM
CISS
COSS
CRSS
GP
ŋD
RL
VSWR-T
Min
65
-
-
2.0
3.0
-
-
-
13
60
10
-
Max
-
6.0
6.0
6.0
-
270
240
48
-
-
-
30:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
%
-
Test Conditions
VGS = 0.0 V , IDS = 3.0 mA
VGS = 28.0 V , VGS = 0.0 V
VGS = 20.0 V , VDS = 0.0 V
VDS = 10.0 V , IDS = 600.0 mA
VDS = 10.0 V , IDS = 6000.0 mA , Δ VGS = 1.0V, 80 μs Pulse
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDS = 28.0 V , F = 1.0 MHz
VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz
VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz
VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz
VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz
1
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