DU28120V Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – RF MOSFET POWER TRANSISTOR 120W 28V 2-175 MHZ

DU28120V
RF Power MOSFET Transistor
120W, 2-175MHz, 28V
Features
• N-Channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• High saturated output power
• Lower noise figure than bipolar devices
Package Outline
M/A-COM Products
Released; RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
V_DS
65
Gate-Source Voltage
V_GS
20
Drain-Source Current
I_DS
12
Power Dissipation
P_D
250
Junction Temperature
T_J
200
Storage Temperature
T_STG
-55 to +150
Thermal Resistance
θ_JC
0.7
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
Z_IN (Ω)
Z_LOAD (Ω)
30
3.0 - j12.5
8.0 + j6.0
50
1.5 - j8.5
7.0 +j6.5
100
1.0 - j6.0
6.5 + j5.0
V_DD = 28V, I_DQ = 600mA, P_OUT = 120 W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance as
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max
Drain-Source Breakdown Voltage
BV_DSS
65
-
Drain-Source Leakage Current
I_DSS
-
6.0
Gate-Source Leakage Current
I_GSS
-
6.0
Gate Threshold Voltage
V_GS(TH)
2.0
6.0
Forward Transconductance
G_M
3.0
-
Input Capacitance
C_ISS
-
270
Output Capacitance
C_OSS
-
240
Reverse Capacitance
C_RSS
-
48
Power Gain
G_P
13
-
Drain Efficiency
ŋ_D
60
-
Return Loss
R_L
10
-
Load Mismatch Tolerance
VSWR-T - 30:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
%
-
Test Conditions
V_GS = 0.0 V , I_DS = 3.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 600.0 mA
V_DS = 10.0 V , I_DS = 6000.0 mA , Δ V_GS = 1.0V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DD = 28.0 V, I_DQ = 600 mA, P_OUT = 120.0 W F =175 MHz
V_DD = 28.0 V, I_DQ = 600 mA, P_OUT = 120.0 W F =175 MHz
V_DD = 28.0 V, I_DQ = 600 mA, P_OUT = 120.0 W F =175 MHz
V_DD = 28.0 V, I_DQ = 600 mA, P_OUT = 120.0 W F =175 MHz
1
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