DU28120T_17 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor

DU28120T
RF Power MOSFET Transistor
120 W, 2 - 175 MHz, 28 V
Features
 N-Channel enhancement mode device
 DMOS structure
 Lower capacitances for broadband operation
 High saturated output power
 Lower noise figure than bipolar devices
 RoHS Compliant
Package Outline
Rev. V1
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
V_DS
65
Gate-Source Voltage
V_GS
20
Drain-Source Current
I_DS
24
Power Dissipation
P_D
269
Junction Temperature
T_J
200
Storage Temperature
T_STG
-55 to +150
Thermal Resistance
θ_JC
0.65
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
Z_IN (Ω)
Z_LOAD (Ω)
30
4.0 - j8.0
3.4 + j2.4
50
1.0 - j2.5
2.2 +j1.3
100
1.0 - j0.5
2.2 + j0.0
V_DD = 28V, I_DQ = 600mA, P_OUT = 120 W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance
as measured from drain to ground.
LETTER
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
MIN
MAX
24.64
24.89
18.29
18.54
21.21
21.97
12.60
12.85
6.22
6.48
3.81
4.06
5.33
5.59
5.08
5.33
3.05
3.30
2.29
2.54
4.06
4.57
6.68
7.49
.10
.15
INCHES
MIN
MAX
.970
.980
.720
.730
.835
.865
.496
.506
.245
.255
.150
.160
.210
.220
.200
.210
.120
.130
.90
.100
.160
.180
.263
.295
.004
.006
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max Units
Test Conditions
Drain-Source Breakdown Voltage
BV_DSS
65
-
V
V_GS = 0.0 V , I_DS = 3.0 mA
Drain-Source Leakage Current
I_DSS
-
6.0
mA V_GS = 28.0 V , V_GS = 0.0 V
Gate-Source Leakage Current
I_GSS
-
6.0
µA V_GS = 20.0 V , V_DS = 0.0 V
Gate Threshold Voltage
V_GS(TH)
2.0
6.0
V
V_DS = 10.0 V , I_DS = 600.0 mA
Forward Transconductance
G_M
3.0
-
S
V_DS = 10.0 V , I_DS = 6000.0 mA , Δ V_GS = 1.0V, 80 μs Pulse
Input Capacitance
Output Capacitance
C_ISS
C_OSS
-
270
pF V_DS = 28.0 V , F = 1.0 MHz
-
240
pF V_DS = 28.0 V , F = 1.0 MHz
Reverse Capacitance
C_RSS
-
48
pF V_DS = 28.0 V , F = 1.0 MHz
Power Gain
Drain Efficiency
Load Mismatch Tolerance
1
GP
13
-
ŋD
60
-
VSWR-T - 30:1
dB
VDD = 28.0 V, I_DQ = 600 mA, POUT = 120.0 W F =175 MHz
%
VDD = 28.0 V, I_DQ = 600 mA, POUT = 120.0 W F =175 MHz
-
VDD = 28.0 V, I_DQ = 600 mA, POUT = 120.0 W F =175 MHz
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