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DU2810S_17 Datasheet, PDF (1/3 Pages) M/A-COM Technology Solutions, Inc. – RF Power MOSFET Transistor
DU2810S
RF Power MOSFET Transistor
10 W, 2 - 175 MHz, 28 V
Features
 N-Channel enhancement mode device
 DMOS structure
 Lower capacitances for broadband operation
 Common source configuration
 Low noise floor
 RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
65
Gate-Source Voltage
VGS
20
Drain-Source Current
IDS
2.8
Power Dissipation
PD
35
Junction Temperature
TJ
200
Storage Temperature
TSTG
-65 to +150
Thermal Resistance
θJC
2
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
30
ZIN (Ω)
20 - j11.0
ZLOAD (Ω)
23.0 + j3.0
50
24.0 - j15.0
19.0 +j5.0
100
18.0 - j18.0
14.0 + j6.0
200
12.0—j19.0
9.0 + j5.0
VDD = 28V, IDQ = 100mA, POUT = 10.0W
ZIN is the series equivalent input impedance of the device
from gate to source.
ZLOAD is the optimum series equivalent load impedance
as measured from drain to ground.
Package Outline
Rev. V1
LETTER
DIM
A
B
C
D
E
F
G
H
J
K
L
MILLIMETERS
MIN
MAX
24.64
24.89
18.29
18.54
20.07
20.83
9.47
9.73
6.22
6.48
5.64
5.79
2.92
3.30
2.29
2.67
4.04
4.55
6.58
7.39
.10
.15
INCHES
MIN
MAX
.970
.980
.720
.730
.790
.820
.373
.383
.245
.255
.222
.228
.115
.130
.090
.105
.159
.179
.259
.291
.004
.006
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min Max Units
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
65
-
V
VGS = 0.0 V , IDS = 4.0 mA
Drain-Source Leakage Current
IDSS
-
2.0
mA VGS = 28.0 V , VGS = 0.0 V
Gate-Source Leakage Current
IGSS
-
2.0
µA
VGS = 20.0 V , VDS = 0.0 V
Gate Threshold Voltage
VGS(TH)
2.0
6.0
V
VDS = 10.0 V , IDS = 20 mA
Forward Transconductance
GM
160
-
S
VDS = 10.0 V , IDS = 200 mA , Pulsed 80-300 μs
Input Capacitance
Output Capacitance
CISS
COSS
-
14
pF VDS = 28.0 V , F = 1.0 MHz
-
10
pF VDS = 28.0 V , F = 1.0 MHz
Reverse Capacitance
CRSS
-
4.6
pF VDS = 28.0 V , F = 1.0 MHz
Power Gain
Drain Efficiency
Load Mismatch Tolerance
1
GP
13
-
ŋD
55
-
VSWR-T - 20:1
dB
VDD = 28.0 V, IDQ = 100 mA, POUT = 10 W F =175 MHz
%
VDD = 28.0 V, IDQ = 100 mA, POUT = 10 W F =175 MHz
-
VDD = 28.0 V, IDQ = 100 mA, POUT = 10 W F =175 MHz
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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