DU2805S Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 5W, 28V 2 - 175 MHz

DU2805S
RF Power MOSFET Transistor
5W, 2-175MHz, 28V
Features
• N-Channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• High saturated output power
• Lower noise figure than bipolar devices
Package Outline
M/A-COM Products
Released; RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
V_DS
65
Gate-Source Voltage
V_GS
20
Drain-Source Current
I_DS
1.4
Power Dissipation
P_D
15.8
Junction Temperature
T_J
200
Storage Temperature
T_STG
-55 to +150
Thermal Resistance
θ_JC
11.1
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
Z_IN (Ω)
Z_LOAD (Ω)
100
15 - j121.0
57.0 + j23.0
150
39.0 - j77.0
55.0 +j23.0
175
41.0 - j38.0
56.0 + j19.0
200
34.0—j14.0
56.0 + j20.0
V_DD = 28V, I_DQ = 50mA, P_OUT = 5W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance as
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min
Drain-Source Breakdown Voltage
BV_DSS
65
Drain-Source Leakage Current
I_DSS
-
Gate-Source Leakage Current
I_GSS
-
Gate Threshold Voltage
V_GS(TH)
2.0
Forward Transconductance
G_M
80
Input Capacitance
Output Capacitance
C_ISS
-
C_OSS
-
Reverse Capacitance
C_RSS
-
Power Gain
GP
11
Drain Efficiency
Load Mismatch
ŋD
55
VSWR-T -
Max
-
1.0
1.0
6.0
-
7
5
2.4
-
-
20:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
LETTER
DIM
A
MILLIMETERS
MIN
MAX
24.64
24.89
INCHES
MIN MAX
.970 .980
B
18.29
18.54 .720 .730
C
20.07
20.83 .790 .820
D
9.47
9.73
.373 .383
E
6.22
6.48
.245 .255
F
5.64
5.79
.222 .228
G
2.92
3.30
.115 .130
H
2.29
2.67
.090 .105
J
4.04
4.55
.159 .179
K
6.58
7.39
.259 .291
L
.10
.15
.004 .006
Test Conditions
V_GS = 0.0 V , I_DS = 20.0 mA
V_GS = 28.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 10 mA
V_DS = 10.0 V , I_DS = 10 mA , Δ V_GS = 1.0 V, 80 μs Pulse
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
V_DS = 28.0 V , F = 1.0 MHz
VDD = 28.0 V, I_DQ = 50 mA, POUT = 5.0 W F =175 MHz
VDD = 28.0 V, I_DQ = 50 mA, POUT = 5.0 W F =175 MHz
VDD = 28.0 V, I_DQ = 50 mA, POUT = 5.0 W F =175 MHz
1
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