DU1260T Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 6OW, 12V 2 - 175 MHz

DU1260T
RF Power MOSFET Transistor
60W, 2-175MHz, 12V
Features
• N-Channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• High saturated output power
• Lower noise figure than bipolar devices
• Specifically designed for 12 volt applications
M/A-COM Products
Released; RoHS Compliant
Package Outline
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
V_DS
40
Gate-Source Voltage
V_GS
20
Drain-Source Current
I_DS
24
Power Dissipation
P_D
250
Junction Temperature
T_J
200
Storage Temperature
T_STG
-55 to +150
Thermal Resistance
θ_JC
0.7
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
30
Z_IN (Ω)
4.5 - j8.0
Z_LOAD (Ω)
4.6 - j3.0
100
1.4 - j4.0
1.4 - j8.0
175
1.0 - j0.5
1.0 - j0.5
V_DD = 12V, I_DQ = 600mA, P_OUT = 60W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance as
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min
Drain-Source Breakdown Voltage
BV_DSS
40
Drain-Source Leakage Current
I_DSS
-
Gate-Source Leakage Current
I_GSS
-
Gate Threshold Voltage
V_GS(TH)
2.0
Forward Transconductance
G_M
3.0
Input Capacitance
Output Capacitance
C_ISS
-
C_OSS
-
Reverse Capacitance
C_RSS
-
Power Gain
GP
8.0
Drain Efficiency
ŋD
60
Load Mismatch
VSWR-T -
Max
-
6.0
6.0
6.0
-
200
240
48
-
-
30:1
LETTER
DIM
A
B
C
D
E
F
G
H
J
K
L
M
MILLIMETERS
MIN
MAX
24.38
25.15
18.29
18.54
21.36
21.74
12.60
12.85
5.33
5.59
5.08
5.33
3.81
4.06
3.10
3.15
2.51
2.67
4.06
4.57
6.68
7.49
.10
.15
INCHES
MIN MAX
.960 .990
.720 .730
.841 .856
.496 .506
.210 .220
.200 .210
.150 .160
.122 .128
.099 .105
.160 .180
.263 .295
.004 .006
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V_GS = 0.0 V , I_DS = 30.0 mA
V_GS = 15.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 600 mA
V_DS = 10.0 V , I_DS = 6000 mA , Δ V_GS = 1.0 V
V_DS = 12.0 V , F = 1.0 MHz
V_DS = 12.0 V , F = 1.0 MHz
V_DS = 12.0 V , F = 1.0 MHz
VDD = 12.0 V, I_DQ = 600 mA, POUT = 60 W F =175 MHz
VDD = 12.0 V, I_DQ = 600 mA, POUT = 60 W F =175 MHz
VDD = 12.0 V, I_DQ = 600 mA, POUT = 60 W F =175 MHz
1
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