DU1230S Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 30W, 12V, 2 - 175 MHz

DU1230S
RF Power MOSFET Transistor
30W, 2-175MHz, 12V
Features
• N-Channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• High saturated output power
• Lower noise figure than bipolar devices
• Specifically designed for 12 volt applications
Package Outline
M/A-COM Products
Released; RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage
V_DS
40
Gate-Source Voltage
V_GS
20
Drain-Source Current
I_DS
8
Power Dissipation
P_D
175
Junction Temperature
T_J
200
Storage Temperature
T_STG
-55 to +150
Thermal Resistance
θ_JC
1
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
30
Z_IN (Ω)
12.0 - j14.0
Z_LOAD (Ω)
2.5 - j3.0
100
4.0 - j8.0
2.5 - j1.0
175
2.0 - j2.5
2.5 - j0.5
V_DD = 12V, I_DQ = 200mA, P_OUT = 30W
Z_IN is the series equivalent input impedance of the device
from gate to source.
Z_LOAD is the optimum series equivalent load impedance as
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min
Drain-Source Breakdown Voltage
BV_DSS
40
Drain-Source Leakage Current
I_DSS
-
Gate-Source Leakage Current
I_GSS
-
Gate Threshold Voltage
V_GS(TH)
2..0
Forward Transconductance
G_M
1.0
Input Capacitance
Output Capacitance
C_ISS
-
C_OSS
-
Reverse Capacitance
C_RSS
-
Power Gain
GP
9.0
Drain Efficiency
Load Mismatch
ŋD
60
VSWR-T -
Max
-
2.0
2.0
6.0
-
100
120
24
-
-
30:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
LETTER
DIM
MILLIMETERS
MIN
MAX
INCHES
MIN MAX
A
24.64
24.89 .970 .980
B
18.29
18.54 .720 .730
C
20.07
20.83 .790 .820
D
9.47
9.73
.373 .383
E
6.22
6.48
.245 .255
F
5.64
5.79
.222 .228
G
2.92
3.30
.115 .130
H
2.29
2.67
.090 .105
J
4.04
4.55
.159 .179
K
6.58
7.39
.259 .291
L
.10
.15
.004 .006
Test Conditions
V_GS = 0.0 V , I_DS = 10.0 mA
V_GS = 15.0 V , V_GS = 0.0 V
V_GS = 20.0 V , V_DS = 0.0 V
V_DS = 10.0 V , I_DS = 200 mA
V_DS = 10.0 V , I_DS = 2000 mA , Δ V_GS = 1.0 V
V_DS = 12.0 V , F = 1.0 MHz
V_DS = 12.0 V , F = 1.0 MHz
V_DS = 12.0 V , F = 1.0 MHz
VDD = 12.0 V, I_DQ = 200 mA, POUT = 30 W F =175 MHz
VDD = 12.0 V, I_DQ = 200 mA, POUT = 30 W F =175 MHz
VDD = 12.0 V, I_DQ = 200 mA, POUT = 30 W F =175 MHz
1
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