AM42-0007-DIE_15 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – GaAs MMIC Power Amplifier, 2.0 W

AM42-0007-DIE
GaAs MMIC Power Amplifier, 2.0 W
14.0 - 14.5 GHz
Features
 High Linear Gain: 22 dB Typical.
 High Saturated Output Power: +33 dBm Typical
 High Power Added Efficiency: 22% Typical
 High P1dB: +32 dBm Typical
 50 Ω Input / Output Broadband Matched
 Integrated Output Power Detector
 High Performance Ceramic Bolt Down Package
Description
The AM42-0007-DIE is a three stage MMIC linear
power amplifier fabricated on a mature 0.5 micron
MBE based GaAs process. The AM42-0007-DIE
employs a fully matched chip with integral bias
networks and output power detector.
This GaAs MMIC power amplifier is ideally suited for
used as an output stage or driver in applications for
VSAT applications.
Functional Schematic
Rev. V6
Ordering Information
Part Number
AM42-0007-DIE
Package
DIE
Absolute Maximum Ratings ^1,2
Parameter
Absolute Maximum
V_DD
V_GG
Power Dissipation
+12 Volts
-10 Volts
17.9 W
RF Input Power
+23 dBm
ChannelTemperature
+150 °C
Storage Temperature
-65 °C to +150 °C
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. Back of die temperature (T_B) = +25°C.
Typical Bias Configuration ^3,4
3. Nominal bias is obtained by first connecting –5 volts to pin V_GG
(resistor network used) followed by connecting +9 volts to pin
V_DD. Note sequence.
4. It is recommended that the die be mounted with Au/Sn eutectic
performs for good RF ground and thermal interface.
1
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