A66-3 Datasheet, PDF (1/2 Pages) Tyco Electronics – 10 TO 1000 MHz CASCADABLE AMPLIFIER

A66-3 / SMA66-3
Cascadable Amplifier
10 to 1000 MHz
Rev. V3
Features
• HIGH GAIN - TWO STAGES: 26.0 dB (TYP.)
• LOW NOISE: <3.0 dB (TYP.)
• HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS
Description
The A66-3 RF amplifier is a discrete hybrid design, which uses
thin film manufacturing processes for consistent performance
and high reliability.
This 2 stage bipolar transistor feedback amplifier design
displays impressive performance over a broadband
frequency range. An active DC biasing network insures
temperature-stable performance.
Both TO-8 and Surface Mount packages are hermetically
sealed, and MIL-STD-883 environmental screening is avail-
able.
Ordering Information
Product Image
Part Number
A66-3
SMA66-3
CA66-3 **
Package
TO-8
Surface Mount
SMA Connectorized
** The connectorized version is not RoHs compliant.
Electrical Specifications: Z₀ = 50Ω, V_CC = +5 V_DC
Absolute Maximum Ratings
Parameter
Frequency
Small Signal Gain (min)
Gain Flatness (max)
Reverse Isolation
Noise Figure (max)
Power Output
@ 1 dB comp. (min)
IP3
IP2
Second Order Harmonic IP
VSWR Input / Output (max)
DC Current @ 5 Volts (max)
Units
MHz
dB
dB
dB
dB
Typical
25ºC
5-1100
26.0
±0.4
36
3.0
Guaranteed
0º to 50ºC -54º to +85ºC*
10-1000
10-1000
24.5
24.0
±0.7
±1.0
3.5
4.0
dBm
3.0
1.5
1.0
dBm
+13
dBm
+32
dBm
+37
1.3:1 / 1.3:1 1.8:1 / 1.8:1
mA
16
18
2.0:1 / 2.0:1
19
Parameter
Absolute
Maximum
Storage Temperature -62ºC to +125ºC
Case Temperature
+125ºC
DC Voltage
+10 V
Continuous Input Power
10 dBm
Short Term Input power
(1 minute max.)
50 mW
Peak Power (3 µsec max.)
0.5 W
“S” Series Burn-In
Temperature (case)
+125ºC
Thermal Data: V_CC = +5 V_DC
Parameter
Rating
Thermal Resistance θ_jc
Transistor Power Dissipation P_d
Junction Temperature Rise
Above Case T_jc
170ºC/W
0.016 W
3ºC
* Over temperature performance limits for part number CA66-3, guaranteed from 0^oC to +50^oC only.
1
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