A66-1 Datasheet, PDF (1/2 Pages) Tyco Electronics – 10 TO 1000 MHz CASCADABLE AMPLIFIER

A66-1 / SMA66-1
Cascadable Amplifier
10 to 1000 MHz
Rev. V3
Features
• HIGH GAIN - TWO STAGES: 27.5 dB (TYP.)
• LOW NOISE: <3.0 dB (TYP.)
• HIGH POWER OUTPUT: 15.0 dBm (TYP.)
• WIDE POWER SUPLLY RANGE: 5 TO 15 VOLTS
Description
The A66-1 RF amplifier is a discrete hybrid design, which uses
thin film manufacturing processes for consistent performance
and high reliability.
This 2 stage bipolar transistor feedback amplifier design
displays impressive performance over a broadband
frequency range. An active DC biasing network insures
temperature-stable performance.
Both TO-8 and Surface Mount packages are hermetically
sealed, and MIL-STD-883 environmental screening is avail-
able.
Ordering Information
Product Image
Part Number
A66-1
SMA66-1
CA66-1 **
Package
TO-8
Surface Mount
SMA Connectorized
** The connectorized version is not RoHs compliant.
Electrical Specifications: Z₀ = 50Ω, V_CC = +15 V_DC
Absolute Maximum Ratings
Parameter
Units
Typical
25ºC
Guaranteed
0º to 50ºC -54º to +85ºC*
Frequency
MHz
5-1200
10-1000
10-1000
Small Signal Gain (min)
dB
27.5
26.0
25.5
Gain Flatness (max)
dB
±0.4
±0.7
±1.0
Reverse Isolation
dB
33
Noise Figure (max)
dB
2.9
3.5
4.0
Power Output
@ 1 dB comp. (min)
dBm
15.0
14.5
14.0
IP3
dBm
+28
IP2
dBm
+38
Second Order Harmonic IP dBm
+43
VSWR Input / Output (max)
1.5:1 / 1.5:1 1.8:1 / 1.8:1 2.0:1 / 2.0:1
DC Current @ 15 Volts (max) mA
66
69
72
Parameter
Absolute
Maximum
Storage Temperature -62ºC to +125ºC
Case Temperature
+125ºC
DC Voltage
+17 V
Continuous Input Power
6 dBm
Short Term Input power
(1 minute max.)
50 mW
Peak Power (3 µsec max.)
0.5 W
“S” Series Burn-In
Temperature (case)
+125ºC
Thermal Data: V_CC = +15 V_DC
Parameter
Rating
Thermal Resistance θ_jc
Transistor Power Dissipation P_d
Junction Temperature Rise
Above Case T_jc
145ºC/W
0.419 W
61ºC
* Over temperature performance limits for part number CA66-1, guaranteed from 0^oC to +50^oC only.
1
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