A61 Datasheet, PDF (1/2 Pages) Tyco Electronics – 2 TO 6 GHz CASCADABLE AMPLIFIER

A61 / SMA61
Cascadable Amplifier
2 to 6 GHz
Features
• WIDE BANDWIDTH: 2-6 GHz
• MEDIUM OUTPUT LEVEL: +12.5 dBm (TYP.)
• LOW NOISE: 3.2 dB (TYP.)
Product Image
Description
The A61 RF amplifier is a discrete hybrid design, which uses
thin film manufacturing processes for accurate performance
and high reliability.
This single stage GaAs FET feedback amplifier design displays
impressive performance characteristics over a broadband
frequency range. An RF choke is used for DC power supply
decoupling.
Both TO-8 and Surface Mount packages are hermetically
sealed, and MIL-STD-883 environmental screening is available.
Ordering Information
Rev. V3
Part Number
A61
SMA61
CA61 **
Package
TO-8
Surface Mount
SMA Connectorized
** The connectorized version is not RoHs compliant.
Electrical Specifications: Z₀ = 50Ω, V_CC = +5 V_DC
Absolute Maximum Ratings
Parameter
Frequency
Small Signal Gain (min)
Gain Flatness (max)
Reverse Isolation
Noise Figure (max)
Power Output
@ 1 dB comp. (min)
IP3
IP2
Units
GHz
dB
dB
dB
dB
dBm
dBm
dBm
Typical
25ºC
1.8-6.2
7.5
±0.4
14
3.2
12.5
+25
+37
Guaranteed
0º to 50ºC -54º to +85ºC*
2.0-6.0
2.0-6.0
6.5
6.0
±0.7
±0.9
4.3
4.8
11.0
10.5
Parameter
Absolute
Maximum
Storage Temperature -62ºC to +125ºC
Case Temperature
+125ºC
DC Voltage
+6 V
Continuous Input Power
13 dBm
Short Term Input power
(1 minute max.)
50 mW
Peak Power (3 µsec max.)
0.25 W
“S” Series Burn-In
Temperature (case)
+125ºC
Thermal Data: V_CC = +5 V_DC
Parameter
Rating
Second Order Harmonic IP
VSWR Input / Output (max)
DC Current @ 5 Volts (max)
dBm
mA
+42
1.5:1 / 1.5:1 2.0:1 / 2.0:1
35
40
2.1:1 / 2.1:1
42
Thermal Resistance θ_jc
Transistor Power Dissipation P_d
Junction Temperature Rise
Above Case T_jc
132ºC/W
0.171 W
23ºC
* Over temperature performance limits for part number CA61, guaranteed from 0^oC to +50^oC only.
1
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