A32 Datasheet, PDF (1/3 Pages) Tyco Electronics – 100 TO 2000 MHz CASCADABLE AMPLIFIER

A32 / SMA32
Cascadable Amplifier
100 to 2000 MHz
Features
 LOW NOISE FIGURE: 3.5 dB (TYP.)
 HIGH THIRD ORDER IP: +32 dBm (TYP.)
 HIGH OUTPUT LEVEL: +21 dBm (TYP.)
 LOW VSWR: 1.8:1 (TYP.)
Description
The A32 RF amplifier is a discrete hybrid design, which uses
thin film manufacturing processes for accurate performance
and high reliability.
This single stage GaAs FET feedback amplifier design displays
impressive performance characteristics over a broadband
frequency range. An RF choke is used for DC power supply
decoupling.
Both TO-8 and Surface Mount packages are hermetically
sealed, and MIL-STD-883 environmental screening is available.
Ordering Information
Product Image
Rev. V4
Part Number
A32
SMA32
CA32
Package
TO-8
Surface Mount
SMA Connectorized
Electrical Specifications: Z₀ = 50, V_CC = +15 V_DC
Absolute Maximum Ratings
Parameter
Units
Typical
25ºC
Guaranteed
0º to 50ºC -54º to +85ºC*
Frequency
MHz
10-2000
10-2000
10-2000
Small Signal Gain (min)
dB
10.0
9.0
8.5
Gain Flatness (max)
dB
±3.0
±0.7
±1.0
Reverse Isolation
dB
20
Noise Figure (max)
dB
3.5
4.0
4.5
Power Output
@ 1 dB comp. (min)
dBm
21.0
19.0
18.0
IP3
dBm
+32
IP2
dBm
+38
Second Order Harmonic IP dBm
+40
VSWR Input / Output (max)
1.8:1 / 1.8:1 2.1:1 / 2.1:1 2.3:1 / 2.3:1
DC Current @ 15 Volts (max) mA
94
98
100
Parameter
Absolute
Maximum
Storage Temperature -62ºC to +125ºC
Case Temperature
+125ºC
DC Voltage
+17 V
Continuous Input Power
13 dBm
Short Term Input power
(1 minute max.)
50 mW
Peak Power (3 µsec max.)
0.5 W
“S” Series Burn-In
Temperature (case)
+125ºC
Thermal Data: V_CC = +15 V_DC
Parameter
Rating
Thermal Resistance θ_jc
Transistor Power Dissipation P_d
Junction Temperature Rise
Above Case T_jc
182ºC/W
0.288 W
+52ºC
1 _{* Over temperature performance limits for part number CA32, guaranteed from 0}^o_{C to +50}^o_{C only.}
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