A180 Datasheet, PDF (1/2 Pages) Powerex Power Semiconductors – SILICON RECTIFIER

A180 / SMA180
Cascadable Amplifier
10 to 500 MHz
Features
• HIGH REVERSE ISOLATION: 22 dB (TYP.)
• HIGH OUTPUT POWER: +18 dBm (TYP.)
Product Image
Rev. V2
Description
The A180 RF amplifier is a discrete hybrid design, which uses
thin film manufacturing processes for accurate performance and
high reliability.
This single stage bipolar transistor feedback amplifier design
displays impressive performance over a broadband frequency
range. An active DC biasing network insures
temperature-stable performance.
Both TO-8 and Surface Mount packages are hermetically
sealed, and MIL-STD-883 environmental screening is available.
Ordering Information
Part Number
A180
SMA180
CA180 **
Package
TO-8
Surface Mount
SMA Connectorized
** The connectorized version is not RoHs compliant.
Electrical Specifications: Z₀ = 50Ω, V_CC = +15 V_DC
Absolute Maximum Ratings
Parameter
Frequency
Small Signal Gain (min)
Gain Flatness (max)
Reverse Isolation
Noise Figure (max)
Power Output
@ 1 dB comp. (min)
IP3
IP2
Units
MHz
dB
dB
dB
dB
dBm
dBm
dBm
Typical
25ºC
5-600
16.5
±0.3
22
3.4
18.0
+33
+45
Guaranteed
0º to 50ºC -54º to +85ºC*
10-500
10-500
16.0
15.5
±0.7
±1.0
4.0
4.5
16.0
15.0
Parameter
Absolute
Maximum
Storage Temperature -62ºC to +125ºC
Case Temperature
+125ºC
DC Voltage
+17 V
Continuous Input Power
+15 dBm
Short Term Input power
(1 minute max.)
100 mW
Peak Power (3 µsec max.)
0.5 W
“S” Series Burn-In
Temperature (case)
+125ºC
Thermal Data: V_CC = +15 V_DC
Parameter
Rating
Second Order Harmonic IP dBm
VSWR Input / Output (max)
DC Current @ 15 Volts (max) mA
+51
1.4:1 / 1.5:1 1.9:1 / 2.1:1
63
69
2.1:1 / 2.2:1
75
Thermal Resistance θ_jc
Transistor Power Dissipation P_d
Junction Temperature Rise
Above Case T_jc
45ºC/W
0.509 W
+22.9ºC
* Over temperature performance limits for part number CA180, guaranteed from 0^oC to +50^oC only.
1
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