2N6676 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,175W)

2N6676 & 2N6678
NPN High Power Silicon Transistor
Features
 Available in JAN, JANTX, JANTXV per
MIL-PRF-19500/538
 TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
Collector - Base Cutoff Current
On Characteristics¹
Forward Current Transfer Ratio
Test Conditions
Symbol Units Min.
I_C = 200 mAdc, 2N6676
I_C = 200 mAdc, 2N6678
V_(BR)CEO Vdc
300
400
V_CE = 450 Vdc, V_BE = -1.5 Vdc, 2N6676
V_CE = 650 Vdc, V_BE = -1.5 Vdc, 2N6678
I_CEX µAdc
—
V_EB = 7 Vdc
I_EBO mAdc
—
V_CB = 450 Vdc, 2N6676
V_CB = 650 Vdc, 2N6678
I_CBO mAdc
—
I_C = 1 Adc, V_CE = 3 Vdc
I_C = 15 Adc, V_CE = 3 Vdc
H_FE
-
15
8
Collector - Emitter Sustaining Voltage
I_C = 15 Adc, I_B = 3 Adc
V_CE(SAT) Vdc
—
Base - Emitter Saturation Voltage
Dynamic Characteristics
Small-Signal Short-Circuit
Forward Current Transfer Ratio
Output Capacitance
I_C = 15 Adc, I_B = 3 Adc
V_BE(SAT) Vdc
—
I_C = 1 Adc, V_CE = 10 Vdc, f = 5 kHz
| H_FE | -
3
V_CB = 10 Vdc, I_E = 0, 100 kHz ≤ f ≤ 1 MHz C_OBO pF
150
Max.
—
1.0
2.0
1.0
40
20
1.0
1.5
10
500
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
1
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