2N6674 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – Power Transistors

2N6674 & 2N6675
NPN High Power Silicon Transistor
Features
 Available in JAN, JANTX, JANTXV per
MIL-PRF-19500/537
 TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Test Conditions
I_C = 200 mAdc
2N6674
2N6675
Symbol Units Min.
V_(BR)CEO Vdc
300
400
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
Collector - Base Cutoff Current
On Characteristics¹
Forward Current Transfer Ratio
Collector - Emitter Sustaining Voltage
Base - Emitter Saturation Voltage
Dynamic Characteristics
Small-Signal Short-Circuit
Forward Current Transfer Ratio
V_CE = 450 Vdc, V_BE = -1.5 Vdc, 2N6674
V_CE = 650 Vdc, V_BE = -1.5 Vdc, 2N6675
I_CEX
Adc
—
V_EB = 7 Vdc
V_CB = 450 Vdc, 2N6674
I_EBO mAdc
—
I_CBO mAdc
—
I_C = 1 Adc, V_CE = 3 Vdc
I_C = 10 Adc, V_CE = 2 Vdc
I_C = 10 Adc, I_B = 2 Adc
I_C = 15 Adc, I_B = 5 Adc
I_C = 1 Adc, I_B = 2 Adc
H_FE
-
15
8
V_CE(SAT) Vdc
—
V_BE(SAT) Vdc
—
I_C = 0.5 Adc, V_CE = 10 Vdc, f = 1 kHz | H_FE | -
3
Output Capacitance
V_CB = 10 Vdc, I_E = 0, 100 kHz ≤ f ≤ 1 MHz C_OBO pF
150
Max.
—
0.1
2.0
1.0
40
20
1.0
5.0
1.5
10
500
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
1
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