2N6283 Datasheet, PDF(1/4 Page) ON Semiconductor – Darlington Complementary Silicon Power Transistors

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2N6283 Datasheet, PDF (1/4 Pages) ON Semiconductor – Darlington Complementary Silicon Power Transistors

2N6283 & 2N6284

NPN Darlington Power Silicon Transistor

Features

ï· Available in JAN, JANTX, JANTXV per

MIL-PRF-19500/371

ï· TO-3 (TO-204AA) Package

Rev. V1

Electrical Characteristics

Parameter

Off Characteristics

Collector - Emitter Breakdown Voltage

Collector - Emitter Cutoff Current

Collector - Base Cutoff Current

On Characteristics1

Forward Current Transfer Ratio

Collector - Emitter Saturation Voltage

Base - Emitter Saturation Voltage

Base - Emitter Voltage

Dynamic Characteristics

Magnitude of Common

Small-Signal Short-Circuit

Forward Current Transfer Ratio

Small-Signal Short-Circuit

Forward Current Transfer Ratio

Output Capacitance

Switching Characteristics

Turn-On Time

Test Conditions

Symbol Units Min. Max.

IC = 100 mAdc

2N6283

2N6284

VCE = 40 Vdc, 2N6283

VCE = 50 Vdc, 2N6284

VCE = 80 Vdc, VBE = -1.5 Vdc, 2N6283

VCE = 100 Vdc, VBE = -1.5 Vdc, 2N6284

VEB = 7 Vdc

V(BR)CEO Vdc

100

ICEO mAdc â

ICEX mAdc â

IEBO mAdc â

1.0

0.01

2.5

IC = 1 Adc, VCE = 3 Vdc

IC = 10 Adc, VCE = 3 Vdc

IC = 20 Adc, VCE = 3 Vdc

IC = 20 Adc, IB = 200 mAdc

IC = 10 Adc, IB = 40 mAdc

IC = 20 Adc, IB = 200 mAdc

IC = 10 Adc, IB = 3 Vdc

HFE

VCE(SAT) Vdc

VBE(SAT) Vdc

VBE Vdc

1500

1250

500

18000

3.0

2.0

4.0

2.8

IC = 10 Adc, VCE = 3 Vdc, f = 1 kHz

| HFE | -

IC = 10 Adc, VCE = 3 Vdc, f = 1 kHz

HFE

700

VCB = 10 Vdc, IE = 0, 100 kHz â¤ f â¤ 1 MHz

COBO pF

350

VCC = 30 Vdc; IC = 10 Adc; IB1 = 40 mAdc

TON

Âµs

Turn-Off Time

VCC = 30 Vdc; IC = 10 Adc; IB1 = IB2 = 40 mAdc TOFF Âµs

Safe Operating Area

DC Tests:

Test 1:

Test 2:

Test 3:

TC = +25 Â°C, I Cycle, t = 1.0 s

VCE = 8.75 Vdc, IC = 20 Adc

VCE = 30 Vdc, IC = 5.8 Adc

VCE = 80 Vdc, IC = 100 mAdc

VCE = 100 Vdc, IC = 100 mAdc

1 1. Pulse Test: Pulse Width = 300 Î¼s, Duty Cycle â¤2.0%.

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DC-0013431

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