2N6249 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

2N6249, 2N6250, & 2N6251
NPN Darlington Power Silicon Transistor
Features
 Available in JAN, JANTX, JANTXV per
MIL-PRF-19500/371
 TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Breakdown Voltage
Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current
Collector - Emitter Cutoff Current
Collector - Base Cutoff Current
On Characteristics¹
Forward Current Transfer Ratio
Collector - Emitter Sustaining Voltage
Base - Emitter Saturation Voltage
Test Conditions
Symbol Units Min.
I_C = 20 mAdc, L = 42 mH, 30 - 60 GHz
(see figure 10 of MIL-PRF-19500/510)
2N6249
2N6250
V_(BR)CEO Vdc
—
2N6251
I_C = 20 mAdc, L = 42 mH, 30 - 60 GHz
(see figure 10 of MIL-PRF-19500/510)
2N6249
2N6250
V_(BR)CER Vdc
—
2N6251
V_EB = 6 Vdc
I_EBO µAdc
—
V_CE = 150 Vdc, 2N6249
V_CE = 225 Vdc, 2N6250
V_CE = 225 Vdc, 2N6251
I_CEO mAdc
—
V_CE = 225 Vdc, V_BE = -1.5 Vdc, 2N6249
V_CE = 300 Vdc, V_BE = -1.5 Vdc, 2N6250 I_CEX µAdc
—
V_CE = 375 Vdc, V_BE = -1.5 Vdc, 2N6251
V_CE = 300 Vdc, 2N6249
V_CE = 325 Vdc, 2N6250
V_CE = 450 Vdc, 2N6251
I_EBO mAdc
—
I_C = 10 Adc, V_CE = 3 Vdc
2N6249
2N6250
2N6251
H_FE
-
10
8
6
I_C = 10 Adc, I_B = 1.0 Adc, 2N6249
I_C = 10 Adc, I_B = 1.25 Adc, 2N6250 V_CE(SAT) Vdc
—
I_C = 10 Adc, I_B = 1.67 Adc, 2N6251
I_C = 10 Adc, I_B = 1.0 Adc, 2N6249
I_C = 10 Adc, I_B = 1.25 Adc, 2N6250 V_BE(SAT) Vdc
—
I_C = 10 Adc, I_B = 1.67 Adc, 2N6251
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
Max.
200
275
350
225
300
375
100
1.0
100
1.0
50
50
50
1.5
2.25
1
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