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2N6193 Datasheet, PDF (1/4 Pages) Semicoa Semiconductor – Type 2N6193 Geometry 9700 Polarity PNP
2N6193
PNP Power Silicon Transistor
Features
 JAN, JANTX, JANTXV, JANS, and JANSR 100K
rads (si) per MIL-PRF-19500/561
 TO-39 (TO-205AD) Package
Rev. V1
Electrical Characteristics
Parameter
Test Conditions
Symbol Units
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
IC = 50 mAdc
VCE = 100 Vdc
VCE = 90 Vdc, VBE = 1.5 Vdc
V(BR)CEO Vdc
ICEO
ICEX
µAdc
Collector - Base Cutoff Current
VCB = 100 Vdc
ICBO µAdc
Emitter - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Emitter - Base Saturation Voltage
Dynamic Characteristics
VEB = 6.0 Vdc
IC = 0.5 Adc, VCE = 2.0 Vdc
IC = 2.0 Adc, VCE = 2.0 Vdc
IC = 5.0 Adc, VCE = 2.0 Vdc
IC = 2.0 Adc, IB = 0.2 Adc
IC = 5.0 Adc, IB = 0.5 Adc
IC = 2.0 Adc, IB = 0.2 Adc
IC = 5.0 Adc, IB = 0.5 Adc
IEBO µAdc
HFE
-
VCE(SAT) Vdc
VBE(SAT) Vdc
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 10.0 Vdc, f = 10 mHz
| HFE |
-
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO pF
Input Capacitance
VBE = 2 Vdc, IC = 0, 100 kHz ≤ f ≤ 1 MHz CIBO pF
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
Safe Operating Area
VCC = -40 Vdc; VBE(OFF) = 2.3 Vdc
IC = 2.0 Adc, IB1 = 0.2 Adc
VCC = -40 Vdc; IC = 2.0 Adc
IB1 = -IB2 = 0.2 Adc
TD
ns
TR
ns
TS
µs
TF
ns
DC Tests:
Test 1:
Test 2:
TC = +25°C, I Cycle, t ≥ 0.5 s
VCE = 2 Vdc, IC = 5 Adc
VCE = 90 Vdc, IC = 55 mAdc
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
Min.
100
—
—
—
60
60
40
—
—
3
—
—
—
—
—
—
Max.
—
100
10
10
100
—
240
—
0.7
1.2
1.2
1.8
15
300
1250
100
100
2.0
200
1
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