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2N5339U3 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – Surface Mount U3 Package
2N5339U3
NPN Power Silicon Transistor
Features
 JANS and JANSR Qualified to
MIL-PRF-19500/560
 JEDEC Registered 2N5154
 Lightweight & Low Power
 Ideal for Space, Military, and Other High
Reliability Applications
 Surface Mount U3 Package
Rev. V1
Electrical Characteristics
Parameter
Test Conditions
Symbol Units
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
IC = 50 mAdc
VCE = 100 Vdc
VCE = 90 Vdc, VBE = 1.5 Vdc
V(BR)CEO Vdc
ICEO
ICEX
µAdc
Collector - Base Cutoff Current
VCB = 100 Vdc
ICBO µAdc
Emitter - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Emitter - Base Saturation Voltage
Dynamic Characteristics
VEB = 6.0 Vdc
IC = 0.5 Adc, VCE = 2.0 Vdc
IC = 2.0 Adc, VCE = 2.0 Vdc
IC = 5.0 Adc, VCE = 2.0 Vdc
IC = 2.0 Adc, IB = 0.2 Adc
IC = 5.0 Adc, IB = 0.5 Adc
IC = 2.0 Adc, IB = 0.2 Adc
IC = 5.0 Adc, IB = 0.5 Adc
IEBO µAdc
HFE
-
VCE(SAT) Vdc
VBE(SAT) Vdc
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
IC = 0.5 Adc, VCE = 10.0 Vdc, f = 10 mHz
| HFE |
-
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO pF
Input Capacitance
VBE = 2 Vdc, IC = 0, 100 kHz ≤ f ≤ 1 MHz CIBO pF
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
TC = +25°C, I Cycle, t ≥ 0.5 s
VCE = 2 Vdc, IC = 5 Adc
VCE = 5 Vdc, IC = 2 Adc
VCE = 90 Vdc, IC = 55 mAdc
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
Min.
100
—
—
—
60
60
40
—
—
3
—
—
Max.
—
100
1.0
1.0
100
—
240
—
0.7
1.2
1.2
1.8
15
250
1000
1
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DC-0013421