2N3055 Datasheet, PDF(1/3 Page) Mospec Semiconductor

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2N3055 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,50V,115W)

2N3055

NPN Power Silicon Transistor

Features

ï· Available in JAN, JANTX, JANTXV per MIL-PRF-

19500/407

ï· TO-3 (TO-204AA) Package

Rev. V1

Electrical Characteristics

Parameter

Off Characteristics

Collector - Emitter Breakdown Voltage

Collector - Emitter Cutoff Current

Emitter - Base Cutoff Current

On Characteristics

Forward Current Transfer Ratio

Collector - Emitter Saturation Voltage

Emitter - Base Saturation Voltage

Dynamic Characteristics

Test Conditions

Symbol Units Min.

IC = 200 mAdc

IC = 200 mAdc, RBE = 100 Î©

VBE = -1.5 Vdc, IC = 200 mAdc

VCE = 60 Vdc

VBE = = -1.5 Vdc, VCE = 100 Vdc

VEB = 7.0 Vdc

V(BR)CEO

V(BR)CER Vdc

V(BR)CEX

ICEO

ICEX

mAdc

IEBO mAdc

IC = 0.5 Adc, VCE = 4.0 Vdc

IC = 4.0 Adc, VCE = 4.0 Vdc

IC = 10.0 Adc, VCE = 4.0 Vdc

IC = 4.0 Adc, IB = 0.4 Adc

IC = 10.0 Adc, IB = 3.3 Adc

IC = 4.0 Adc, VCE = 4.0 Vdc

HFE

VCE(SAT) Vdc

VBE(SAT) Vdc

Magnitude of Common Emitter Small-Signal

Short-Circuit Forward Current Transfer Ratio

IC = 1 Adc, VCE= 4.0 Vdc, f = 100 kHz

| HFE |

Output Capacitance

Switching Characteristics

Turn-On Time

VCB = 10 Vdc, IE = 0, 100 kHz â¤ f â¤ 1 MHz COBO pF

VCC = 30 Vdc; IC = 4.0 Adc; IB1 = 0.4 Adc TON Âµs

Turn-Off Time

IC = 4.0 Adc; IB1= -IB2= 0.4 Adc

Safe Operating Area

DC Tests:

Test 1:

Test 2:

TC = +25 Â°C, I Cycle, t = 1.0 s

VCE = 7.8 Vdc, IC = 15 Adc

VCE = 70.0 Vdc, IC = 1.67 Adc

TOFF

Âµs

Max.

0.75

2.0

1.4

700

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