2N232X Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – Silicon Controlled Rectifier

2N232x Series
Silicon Controlled Rectifier
Features
 Available in JAN, JANTX, JANTXV per MIL-PRF-
19500/276
 TO-5 & TO-39 (TO-205AD) Package
Rev. V2
Electrical Characteristics
Characteristics
Symbol Min. Max. Units
Subgroup 2 Testing
Reverse Blocking Current
Forward Blocking Current
Reverse Gate Current
(V_KG = 6 Vdc)
Gate Trigger Voltage & Current
V₂ = V_FBX = 6 Vdc; R_L = 100 W
Subgroup 4 Testing
R₂ = 1 kΩ
R₂ = 2 kΩ
V_R = 50 Vdc
V_R = 100 Vdc
V_R = 200 Vdc
V_R = 300 Vdc
V_R = 400 Vdc
R₂ = 1 kΩ
R₂ = 2 kΩ
V_R = 50 Vdc
V_R = 100 Vdc
V_R = 200 Vdc
V_R = 300 Vdc
V_R = 400 Vdc
R_e = 1 kΩ
R_e = 2 kΩ
2N2323, S - 2N2329, S
2N2323A, AS - 2N2329A, AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S, A, AS
2N2323, S - 2N2329, S
2N2323A, AS - 2N2329A, AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S, A, AS
2N2323, S - 2N2329, S
2N2323A, AS - 2N2329A, AS
I_RBX1
I_FBX1
I_kg
V_GT1
I_GT1
V_GT1
I_GT1
—
—
—
0.35
—
0.35
—
10
µAdc
10
µAdc
200
µAdc
0.80
Vdc
200
µAdc
0.60
Vdc
20
µAdc
Exponential Rate of Voltage Rise
T_A = 125°C
dv/dt = 1.8 v/µs, R₃ = 1 kΩ 2N2323, S - 2N2329, S
dv/dt = 0.7 v/ms, R₃ = 2 kW 2N2323A, AS - 2N2329A, AS
V_R = 50 Vdc
2N2323, S, A, AS
47
50 Ω ≤ R_L ≤ 400 W, C = 0.1
repetition rate = 60 pps,
test duration = 15 seconds
to
1.0
µF,
V_R
V_R
V_R
V_R
=
=
=
=
100
200
300
400
Vdc
Vdc
Vdc
Vdc
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S, A, AS
V_FBX
95
190
285
380
Forward ―on‖ Voltage
I_FM = 4a (pk) (pulse), pulse width =
8.5 ms, max; duty cycle = 2% max.
V_FM
—
Holding Current
—
Vdc
2.2
V(pk)
V_AA = 24 Vdc max., I_F1 = 100 mAdc,
I_F2 = 10 mAdc
Gate trigger source voltage = 6 Vdc,
trigger pulse width = 25 ms min.
R₂ = 330 Ω
R₃ = 1 kΩ
R₃ = 2 kΩ
2N2323, S - 2N2329, S
2N2323A, AS - 2N2329A, AS
I_HOX
—
2
mAdc
1
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