2N2221A Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – NPN SILICON PLANAR TRANSISTORS

2N2221A, L, UA, UB &
2N2222A, L, UA, UB
Radiation Hardened NPN Silicon Switching Transistors
Features
 Qualified to MIL-PRF-19500/255
 Levels
JANSM-3K Rads (Si) JAN
JANSD-10K Rads (Si) JANTX
JANSP-30K Rads (Si) JANTXV
JANSL-50K Rads (Si) JAN
JANSR-100K Rads (Si)
 TO-18 (TO-206AA), Surface mount UA & UB
Packages
Applications
 Switching and Linear Applications
 DC and VHF Amplifier Applications
Rev. V1
Electrical Specifications @ T_A = 25°C
Parameter
Test Conditions
Symbol Units Minimum Maximum
Off Characteristics:
Collector - Emitter Breakdown
I_C = 10 mAdc
V_(BR)CEO Vdc
50
—
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
V_CB = 75 Vdc
V_CB = 60 Vdc
V_EB = 6.0 Vdc
V_EB = 4.0 Vdc
I_CBO1
I_CBO2
µAdc
nAdc
—
10
10
I_EBO1
I_EBO2
µAdc
nAdc
—
10
10
Collector - Emitter Cutoff Current
V_CE = 50 Vdc
I_CES nAdc
—
50
On Characteristics¹:
Forward Current Transfer Ratio
Collector - Base Cutoff Current
2N2221A, L, UA, UB
I_C = 0.1 mAdc, V_CE = 10 Vdc
I_C = 1.0 mAdc, V_CE = 10 Vdc
I_C = 10.0 mAdc, V_CE = 10 Vdc
I_C = 150.0 mAdc, V_CE = 10 Vdc
I_C = 500.0 mAdc, V_CE = 10 Vdc
hFE
2N2222A, L, UA, UB
I_C = 0.1 mAdc, V_CE = 10 Vdc
I_C = 1.0 mAdc, V_CE = 10 Vdc
I_C = 10.0 mAdc, V_CE = 10 Vdc
I_C = 150.0 mAdc, V_CE = 10 Vdc
I_C = 500.0 mAdc, V_CE = 10 Vdc
30
—
35
150
40
—
40
120
20
—
50
—
75
325
100
11
100
120
30
—
I_C = 150 mAdc, I_B = 15 mAdc
I_C = 500 mAdc, I_B = 50 mAdc
V_CE(sat) Vdc
—
0.3
1.0
Base - Emitter Saturation Voltage
I_C = 150 mAdc, I_B = 15 mAdc
I_C = 500 mAdc, I_B = 50 mAdc
V_BE(sat) Vdc
0.6
—
1.2
2.0
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2%.
1
(Continued next page)
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