1N914 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diode

1N914 & 1N4148-1
Silicon Switching Diode
Features
 Available in JAN, JANTX, and JANTXV per
MIL-PRF-19500/116
 Metallurgically Bonded
 Hermetically Sealed
 Double Plug Construction
Maximum Ratings
Operating & Storage Temperature: -65°C to +200°C
Operating Current: 200 mA @ T_A = +25°C
Derating Factor: 1.14 mA/°C above T_A = +25°C
Surge Current A: 2.00 A, sinewave, Pw = 8.3 ms
Rev. V1
Electrical Specifications @ +25°C (unless otherwise Specified)
JEDEC
TYPE#
1N914
VBR
@ 100 A
VRWM
IO
Volts
Volts
(pk)
mA
Vf1
IF = 10
mA
Vdc
100
75 75 0.8
Vf2
IF = 50 Trr ¹
mA
Vdc nsec
1.2
5
IR1
@ 20
Vdc
nA
25
IR2
@ 75
Vdc
IR3
@ 20 Vdc
T_A =150°C
IR4
@ 75 Vdc
T_A =150°C
Capacitance Capacitance
@0V
@1.5 V
A
A
A
pF
pF
0.5
35
75
4.0
2.8
1N4148-1 100
75 200 0.8
1.2
5
35
0.5
35
75
4.0
2.8
1. IF = IR = 10 mA, RL = 100 ohms.
Outline Drawing
1
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