1N5802US Datasheet, PDF (1/4 Pages) Microsemi Corporation – SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

1N5802(US), 1N5804(US), 1N5806(US)
Rectifier Diode Series
Ultrafast Recovery
Features
 Popular JEDEC registered series
 Void-less hermetically sealed glass package
 Extremely robust construction
 Internal “Category I” Metallurgical bonds
 JAN, JANTX, JANTXV, and JANS available per
MIL-PRF-19500/477
MELF
Rev. V2
Description
These “Ultrafast Recovery” rectifier diodes are
military qualified to MIL-PRF-19500/477 and are
ideal for high reliability applications. These industry
recognized 2.5 amp rated rectifiers for working peak
reverse voltages from 50 to 150 volts are
hermetically sealed with void-less glass construction
using an internal “Category I” metallurgical bond.
These devices are available in both axial leaded and
MELF package configurations.
Axial
Applications / Benefits
 Ultrafast recovery 2.5 Amp rectifier series 50 to
150 V
 Military, space and other high-reliability
applications
 Switching power supplies
 Applications requiring extremely fast switching &
low forward loss
 High forward surge current capability
 Low thermal resistance
 Controlled avalanche with peak reverse power
capability
Electrical Specifications @ +25°C
Part #
Working
Peak
Reverse
Voltage
(V_RWM)
Min.
(V)
Breakdown
Voltage
(V_BR)
@100 μA
Average
Rectified
Current
(I_R)
Forward
Voltage
(V_F)
@1A
(8.3 ms pulse)
Min.
mA
Max.
Max.
I_0L @ T_L = 75°C I₀₁ @ T_A = 55°C -65°C +25°C
A
V
Reverse
Current
(I_R)
@ VRWM
Surge Reverse
Current³ Recovery
(I_FSM)
Time⁴
(T_RR)
Max.
25°C 125°C
µA
Max.
A
Max.
ns
1N5802
1N5802US
50
60
2.5
1.0
0.800 0.875 1
175
35
25
1N5804
1N5804US
100
110
2.5
1.0
0.800 0.875 1
175
35
25
1N5806
1N5806US
150
160
2.5
1.0
0.800 0.875 1
175
35
25
1. I_0L is rated @ T_L = 75°C @ 3/8 inch lead length. Derate @ 25 mA/°C for T_L above 75°C.
2. I₀₁ is rated @ T_A = 55°C for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where T_J(max) does
not exceed 175°C. Derate @ 8.33 mA/°C for T_A above 55°C.
3. T_A = 25°C @ l_O = 1 A and V_RWM = rated, 8.3 ms surges at 1 minute intervals.
4. I_F = 0.5 A, l_RM = 0.5 A, I_R(REC) = 0.05 A, di/dt = 65 A/µs minimum.
1
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