LY62L6416_1008 Datasheet, PDF (2/13 Pages) Lyontek Inc. – 64K X 16 BIT LOW POWER CMOS SRAM

®
Rev. 1.4
LY62L6416
64K X 16 BIT LOW POWER CMOS SRAM
FEATURES
„ Fast access time : 45/55/70ns
„ Low power consumption:
Operating current : 23/20/18mA (TYP.)
Standby current : 1μA (TYP.) LL/SL -version
„ Single 2.7V ~ 3.6V power supply
„ All inputs and outputs TTL compatible
„ Fully static operation
„ Tri-state output
„ Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
„ Data retention voltage : 1.5V (MIN.)
„ Green package available
„ Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
LY62L6416
LY62L6416(E)
LY62L6416(I)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
Vcc Range
2.7 ~ 3.6V
2.7 ~ 3.6V
2.7 ~ 3.6V
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A15
DECODER
64Kx16
MEMORY ARRAY
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CIRCUIT
COLUMN I/O
GENERAL DESCRIPTION
The LY62L6416 is a 1,048,576-bit low power CMOS
static random access memory organized as 65,536
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY62L6416 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY62L6416 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
Speed
45/55/70ns
45/55/70ns
45/55/70ns
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
1µA
23/20/18mA
1µA
23/20/18mA
1µA
23/20/18mA
PIN DESCRIPTION
SYMBOL DESCRIPTION
A0 - A15
Address Inputs
DQ0 – DQ15 Data Inputs/Outputs
CE#
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB#
Lower Byte Control
UB#
Upper Byte Control
VCC
Power Supply
VSS
Ground
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: [phone]
FAX: [phone]
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