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| MMBT2222AT-SOT-523 Datasheet, PDF (2/4 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – NPN SWITCHING TRANSISTOR | |||
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MMBT2222AT
NPN SWITCHING TRANSISTOR
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V(BR)CBO
V(BR)CEO
V(BR)BEO
ICEX
IBL
hFE
VCEï¼satï¼
VBEï¼satï¼
Cobo
Cibo
fT
NF
td
tr
ts
tf
Collector-base breakown voltage IC=10μA,IE=0
75
Collector- emitter breakown
voltage
IC=10mA,IB=0
40
Emitter-base breakown voltage IE=10μA,IC=0
6
collector cut-off current
VCE=60V,VEB(OFF)=3.0V
Base cut-off current
VCE=60V, VEB(OFF)=3.0V
DC current gain
VCE=10V,IC=0.1mA
35
VCE=10V,IC=1mA
50
VCE=10V,IC=10mA
75
VCE=10V,IC=150mA
100
VCE=10V,IC=500mA
40
collector-emitter saturation
voltage
IC=150mA; IB=15mA
IC=500mA; IB=50mA
base-emitter saturation voltage
IC=150mA; IB=15mA
IC=500mA; IB=50mA
Output capacitance
IE=0,VCB=10V,f=1MHz
Input capacitance
IC=0,VBE=0.5V,f=1MHz
transition frequency
noise figure
delay time
rise time
IC=20mA,VCE =20V,f=100MHz
300
IC=100μA,VCE =10V,
RS =1kâ¦;f =1.0MHz
IC=150mA,IB1=15mA,VBE(off)=-0.5V
-
VCC=30V
-
storage time
fall time
-
VCC=30V,IC=150mA,IB1=IB2=15mA
-
50 nA
50 nA
0.3 V
1V
1.2 V
2.0 V
8 pF
30 pF
MHz
4 dB
10 ns
25 ns
225 ns
60 ns
Revision:20170301-P1
http://www.lgesemi.com
mail:lge@lgesemi.com
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