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| MMBD330 Datasheet, PDF (2/3 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – Schottky Barrier Diodes | |||
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MMBD330/MMBD770
Schottky Barrier Diodes
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Reverse Breakdown voltage
MMBD330
MMBD770
Reverse current MMBD330
MMBD770
Forward voltage MMBD330
MMBD770
Symbol
V(BR)R
IR
VF
Diode capacitance MMBD330
MMBD770
CD
Test conditions MIN
30
IR=100μA
70
VR=25V
VR=35V
IF=1.0mA
IF=10mA
IF=1.0mA
IF=10mA
VR=15V,f=1MHz
VR=20V,f=1MHz
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
MAX UNIT
V
200
nA
200
0.45
0.60
V
0.50
1.0
0.9
pF
0.5
http://www.luguang.cn
mail:lge@luguang.cn
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