FRA801G Datasheet, PDF (2/2 Pages) Taiwan Semiconductor Company, Ltd – 8.0 AMPS. Glass Passivated Fast Recovery Rectifiers

FRA801G-FRA807G
8.0AMP. Glass Passivated Fast Recovery Rectifiers
RATINGS AND CHARACTERISTIC CURVES (FRA801G THRU FRA807G)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
10
FIG.2- TYPICAL REVERSE CHARACTERISTICS
100
8
40
6
Tj=125⁰C
10
4
2
4
Tj=75⁰C
0
0
50
100
150
CASE TEMPERATURE. (^oC)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
125
TJ=125⁰C
8.3ms Single Half Sine Wave
100
JEDEC Method
75
2
1
0.4
0.2
Tj=25⁰C
0.1
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
50
25
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
120
Tj=25⁰C
f=1.0MHz
100
Vsig=50mVp-p
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
400
200
100
40
20
10
80
60
40
20
0
0.1
4
2
1
0.4
Tj=25^oC
Pulse Width=300 s
0.2
1% Duty Cycle
0.5 1
5 10
50 100
REVERSE VOLTAGE. (V)
500 1000
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(+)
50Vdc
(approx)
(-)
DUT
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
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