BC860C Datasheet, PDF (2/2 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – Low current

BC859,BC860
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
BC859B,BC860B
BC859C,BC860C
Collector-emitter saturation voltage
Base-emitter saturation voltage *1
Base-emitter voltage *2
Collector capacitance
Emitter capacitance
Transition frequency
Noise figure
Symbol
Testconditons
ICBO VCB = -30 V, IE = 0
ICBO VCB = -30 V, IE = 0 , Tj = 150
IEBO VEB = -5 V, IC = 0
hFE IC = -2 mA; VCE = -5 V
VCE(sat)
VBE(sat)
VBE
CC
Ce
fT
NF
IC = -10 mA; IB = -0.5 mA
IC = -100 mA; IB = -5 mA;
IC = -10 mA; IB = -0.5 mA
IC = -100 mA; IB = -5 mA;
IC = -2 mA; VCE = -5 V
IC = -10 mA; VCE = -5 V
VCB = -10 V; IE = Ie = 0;f = 1 MHz
IC = Ic = 0; VEB = -500 mV; f = 1 MHz
VCE = -5 V; IC = -10 mA;f = 100 MHz
IC = -200 µA; VCE = -5 V;RS = 2 kÙ;
f = 1 kHz;B = 200 Hz
Min
220
420
-600
100
Typ
-1
-75
-250
-700
-850
-650
4.5
10
Max
-15
-4
-100
475
800
-300
-650
-750
-820
4
Unit
nA
ìA
nA
mV
mV
mV
mV
mV
mV
pF
MHz
dB
*1. VBEsat decreases by about -1.7 mV/K with increasing temperature.
*2. VBE decreases by about -2 mV/K with increasing temperature.
hFE Classification
TYPE
Marking
BC859B
4B
TYPE
Marking
BC860B
4F
BC859C
4C
BC860C
4G
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