SF801G Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – 8.0 AMPS. Glass Passivated Super Fast Rectifiers

SF801G-SF808G
8.0AMP. Glass Passivated Super Fast Rectifiers
TO-220AB
Features
High efficiency, low VF
High current capability
High reliability
High surge current capability
Low power loss.
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application
Mechanical Data
Case: TO-220AB Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: As marked
High temperature soldering guaranteed:
260^oC/10 seconds .16”,(4.06mm) from case.
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SF SF SF SF SF SF SF SF Units
801G 802G 83G 804G 805G 806G 807G 808G
Maximum Recurrent Peak Reverse Voltage V_RRM 50 100 150 200 300 400 500 600 V
Maximum RMS Voltage
VRMS 35 70 105 140 210 280 350 480 V
Maximum DC Blocking Voltage
VDC 50 100 150 200 300 400 500 600 V
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
I(AV)
8.0
A
@TC = 100 ^oC
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
IFSM
125
A
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 4.0A
VF
0.975
1.3
1.7
V
Maximum DC Reverse Current
@TA=25 ^oC at Rated DC Blocking Voltage
@ TA=100 ^oC
IR
10
uA
400
uA
Maximum Reverse Recovery Tim (Note 1) Trr
35
nS
Typical Junction Capacitance (Note 2)
Cj
70
50
pF
Typical Thermal Resistance (Note 3)
Operating Temperature Range TJ
Storage Temperature Range T_STG
R_θJC
TJ
TSTG
3.0
-65 to +150
-65 to +150
o_C/W
o_C
o_C
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Thermal Resistance from Junction to Case Mounted on Heatsink Size of 2” x 3” x 0.25” Al-Plate.
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