SD103A Datasheet, PDF (1/2 Pages) Semtech Corporation – Silicon Schottky Barrier Diodes for general purpose applications

SD103A-SD103C
Small Signal Switching Diodes
Features
For general purpose applications
Metal silicon schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices,steering,biasing and coupling diodes for
fast switching and low logic level applications
Mechanical Data
Case:JEDEC DO--35,glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
VOLTAGE RANGE: 40 -- 20 V
CURRENT: 400 mW
DO - 35(GLASS)
Dimensions in millimeters
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
SD103A
SD103B
Peak reverse voltage
Pow er dissipation (Infinite Heat Sink)
Single cycle surge 60Hz sine w ave
Forward continuous current
V_RRM
40
P_tot
I _FSM
I(AV)
30
400¹⁾
15
350
Junction tenperature
T_J
125
Storage temperature range
T_STG
-55 ---+ 150
1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
SD103C
20
UNITS
V
mW
A
mA
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherw ise specified)
Reverse breakdow n voltage
@ I_R=10 A SD103A
SD103B
SD103C
Leakage current @ V_R=50V
SD103A,VR=30V
SD103B,VR=20V
SD103C,VR=10V
Forw ard voltage drop @ I_F=20mA
I _F=200mA
Junction capacitance @ VR=0V,f=1MHz
Reverse recovery time @ I_{F=IR=50mAto200mA,recover to0.1IR}
Thermal resistance junction to ambient air
Symbols
V_R
I_R
VF
C_J
t_rr
R_θJA
Min.
40
30
20
-
-
-
-
-
Typ.
-
-
-
50
10
250
Max.
-
5
0.37
0.6
-
-
-
UNITS
V
A
V
pF
ns
K/W
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