R2KS Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – AVALANCHE DIODE(145V, 1.0A)

VRM : 145 Volts
IZSM : 1.0 Amp. ( 100 µs )
Features
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
Mechanical Data
* Case : DO-15 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.39 gram
R2KS
Avalanche Diodes
DO - 15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Peak Reverse Voltage
Maximum DC Blocking Reverse Voltage
Minimum Avalanche Breakdown Voltage at IZ = 1mA
Maximum Avalanche Breakdown Voltage at IZ = 1mA
Maximum Allowable Avalanche Current (Note 1)
Maximum Reverse Current at VRM
Ta = 25°C
Maximum Reverse Current at VRM
Ta = 100°C
Typical Avalanche Voltage Temperature Coefficient at Iz = 1mA
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRM
VDC
VBR(min)
VBR(max)
IZSM
IR
IR(H)
TJ
TSTG
Notes :
(1) Non-Repetitive Current Pulse width 100µs Square wave, one shot.
VALUE
145
145
160
180
1.0
10
50
+0.15
- 40 to + 130
- 40 to + 150
UNIT
V
V
V
V
A
µA
µA
V/°C
°C
°C
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